| Original Articles |
|
|
|
|
Transient Hole Trapping in Individual GeSi Quantum Dot Grown on Si(001) Studied by Conductive Atomic Force Microscopy |
| WU Rong, LIN Jian-Hui, ZHANG Sheng-Li, YANG Hong-Bin, JIANG Zui-Min, YANG Xin-Ju |
| Surface Physics Laboratory (National Key Laboratory), Fudan University, Shanghai 200433 |
|
| Cite this article: |
|
WU Rong, LIN Jian-Hui, ZHANG Sheng-Li et al 2008 Chin. Phys. Lett. 25 4360-4363 |
|
|
|
|
Abstract Electrical properties of individual self-assembled GeSi quantum dots grown on Si substrates are investigated by using conductive atomic force microscopy at room temperature. By controlling the bias voltage sweep in a certain fast sweep rate range, a novel current peak is observed in the current--voltage characteristics of the quantum dots. The current peaks are detectable only during the backward voltage sweep immediately after a forward sweep. The current peak position and intensity are found to depend strongly on the voltage sweep conditions. This kind of current--voltage characteristic under fast sweep is very different from the ordinary steady state current behaviour of quantum dots measured previously. The origin of this phenomenon can be attributed to the transient hole trapping in the potential well formed by the quantum dot sandwiched between the native oxide layer and the bottom Si substrate.
|
| Keywords:
68.37.Ps
73.63.Kv
72.20.Jv
|
|
|
Received: 11 July 2008
Published: 27 November 2008
|
|
| PACS: |
68.37.Ps
|
(Atomic force microscopy (AFM))
|
| |
73.63.Kv
|
(Quantum dots)
|
| |
72.20.Jv
|
(Charge carriers: generation, recombination, lifetime, and trapping)
|
|
|
|
|
|
[1] Medeiros-Ribeiro G, Bratkovski A M, Kamins T I, Ohlberg DA A and Williams R S 1998 Science 279 353
[2] Brunner K 2002 Rep. Prog. Phys. 65 27
[3] Zhang S K, Zhu H J, Lu F, Jiang Z M and Wang X 1998 Phys. Rev. Lett. 80 3340
[4] Zhang S K, Lu F, Jiang Z M and Wang X 2000 Solid.Films 369 65
[5] Stomp R, Miyahara Y, Schaer S, Sun Q F, Guo G, Grutter P,Studenikin S, Poole P and Sachrajda A 2005 Phys. Rev. Lett. 94 056802
[6] Geller M, Marent A, Stock E, Bimberg D, Zubkov V I,Shugunova I S and Solomonov A V 2006 Appl. Phys. Lett. 89 232105
[7] Liao W M, Li P W, David M. Kuo T and Lai W T 2006 Appl. Phys. Lett. 88 182109
[8] Xue F, Qin J, Cui J, Fan Y L, Jiang Z M and Yang X J 2005 Surf. Sci. 592 65
[9] Chung H C, Chu W H and Liu C P 2006 Appl. Phys.Lett. 89 082105
[10] Tanaka I, Kamiya I, Sakaki H, Qureshi N, Allen S J andPetroff P M 1999 Appl. Phys. Lett. 74 844
[11] J. Spradlin, S. Dogan, J. Xie, A. A. Baski, and H.Morkoc, 2004 Appl. Phys. Lett. 84 4150
[12] Pan N, Wang X P, Zhang K, Hu H L, Xu B, Li F Q and Hou JG 2005 Nanotechnology 16 1069
[13] Wu Y Q, Zou J, Li F H, Cui J, Lin J H, Wu R and Jiang Z M2007 Nanotechnology 18 025404
[14] Wu R, Li F H, Jiang Z M and Yang X J 2006 Nanotechnology 17 5111
[15]Wu L C, Chen K J,Wang J M, Huang X F, Song Z T and Liu W L2006 Appl. Phys. Lett. 89 112118
[16]Huang S Y and Oda S 2005 Appl. Phys. Lett. 87173107 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
