| Original Articles |
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Optical Defect in GaN-Based Laser Diodes Detected by Cathodoluminescence |
| ZHAO Lu-Bing, WU Jie-Jun, XU Ke, BAO Kui, YANG Zhi-Jian, PAN Yao-Bo, HU Xiao-Dong, ZHANG Guo-Yi |
| Research Center for Wide Gap Semiconductors, Peking University, State Key Laboratory for Artificial Microstructure and Microscopic Physics, School of Physics, Peking University, Beijing 100871 |
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| Cite this article: |
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ZHAO Lu-Bing, WU Jie-Jun, XU Ke et al 2008 Chin. Phys. Lett. 25 4342-4344 |
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Abstract GaN-based laser diodes (LDs) with 399nm wavelength are grown on sapphire substrates by metal organic chemical vapour deposition (MOCVD). Electroluminescence spectra of the fabricated LDs show that the LDs from some grown wafers failed to emit laser. The SEM and XRD results show the similar surface morphology and interface qualities of multi quantum wells (MQWs) and super-lattices between LDs that succeed and fail to emit laser. However, the cathodoluminescence (CL) measurements reveal a kind of optical defect rather than structural defect in un-emitted LDs. Further depth-dependent CL imaging observation indicates that such optical defects originate from the MQWs to the surface of LDs as a non-irradiative recombination centre that should cause the failure of laser emitting of LDs.
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| Keywords:
61.72.Nn
71.55.Eq
78.60.-b
78.60.Hk
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Received: 26 May 2008
Published: 27 November 2008
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| PACS: |
61.72.Nn
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(Stacking faults and other planar or extended defects)
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71.55.Eq
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(III-V semiconductors)
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78.60.-b
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(Other luminescence and radiative recombination)
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78.60.Hk
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(Cathodoluminescence, ionoluminescence)
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