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A 0.18-μm 3.3V 16k Bits 1R1T Phase Change Random Access Memory (PCRAM) Chip |
| DING Sheng, SONG Zhi-Tang, LIU Bo, ZHU Min, CHEN Xiao-Gang, CHEN Yi-Feng, SHEN Ju, FU Cong, FENG Song-Lin |
| State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 |
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| Cite this article: |
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DING Sheng, SONG Zhi-Tang, LIU Bo et al 2008 Chin. Phys. Lett. 25 3815-3817 |
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Abstract Using standard 0.18-μm CMOS process and the special platform for 8-inch phase change random access memory (PCRAM), the first Chinese 16k bits PCRAM chip has been successfully achieved. A 1R1T structure has been designed for low voltage drop and low cost compared to the 1R1D structure and the BJT-switch structure. Full integration of the 16k bits PCRAM chip, including memory cell, array structure, critical circuit module, and physical layout, has been designed and verified. The critical integration technology of the phase change material (PCM) fabrication and the standard CMOS process has been solved. Test results about PCM in a large-scale array have been generated for the next research of PCRAM chip.
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| Keywords:
83.10.Tv
85.40.Bh
85.40.Sz
81.70.Ex
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Received: 03 June 2008
Published: 26 September 2008
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| PACS: |
83.10.Tv
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(Structural and phase changes)
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85.40.Bh
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(Computer-aided design of microcircuits; layout and modeling)
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85.40.Sz
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(Deposition technology)
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81.70.Ex
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(Nondestructive testing: electromagnetic testing, eddy-current testing)
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