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Demonstration of a 4H SiC Betavoltaic Nuclear Battery Based on Schottky Barrier Diode |
| QIAO Da-Yong1, YUAN Wei-Zheng1, GAO Peng1, YAO Xian-Wang1, ZANG Bo1, ZHANG Lin2, GUO Hui2, ZHANG Hong-Jian3 |
| 1Micro and Nano Electromechanical Systems Laboratory, Northwestern Polytechnical University, Xi'an 7100722Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xidian University, Xi'an 7100713China Institute of Atomic Energy, Beijing 102413 |
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| Cite this article: |
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QIAO Da-Yong, YUAN Wei-Zheng, GAO Peng et al 2008 Chin. Phys. Lett. 25 3798-3800 |
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Abstract A 4H SiC betavoltaic nuclear battery is demonstrated. A Schottky barrier diode is utilized for carrier separation. Under illumination of Ni-63 source with an apparent activity of 4mCi/cm2, an open circuit voltage of 0.49V and a short circuit current density of 29.44nA/cm2 are measured. A power conversion efficiency of 1.2%} is obtained. The performance of the device is limited by low shunt resistance, backscattering and attenuation of electron energy in air and Schottky electrode. It is expected to be significantly improved by optimizing the design and processing technology of the device.
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| Keywords:
81.05.Ea
07.10.Cm
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Received: 25 June 2008
Published: 26 September 2008
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| PACS: |
81.05.Ea
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(III-V semiconductors)
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07.10.Cm
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(Micromechanical devices and systems)
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