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VUV/UV/X-Ray Excited Luminescent Properties of Eu3+ nd Pr3+ Doped BiSbO4 |
LI Hui-Liang1,2, WANG Xiao-Jun1,2, YUAN Jun-Lin1,2, ZHAO Jing-Tai1, YANG Xin-Xin1,2, ZHANG Zhi-Jun1,2, CHEN Hao-Hong1,2, ZHANG Guo-Bin3, SHI Chao-Shu3 |
1State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 2000502Graduate School of Chinese Academy of Sciences, Beijing 1000493National Synchrotron Radiation Laboratory, University of Science and Technology of China, Heifei 230026 |
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Cite this article: |
LI Hui-Liang, WANG Xiao-Jun, YUAN Jun-Lin et al 2008 Chin. Phys. Lett. 25 3790-3793 |
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Abstract
Absorption spectra of BiSbO4 are studied. The electronic structure calculated by the DFT shows that BiSbO4 is a semiconductor, with direct band gap 2.96 eV, which is consistent with UV-visible diffuse reflectance experiment. The host lattice emission band is located at 440 nm under VUV excitation. Eu3+ and Pr3+ doped samples have high luminescence efficiency in emitting red and green light, respectively. From the partial density of states, Eu3+ doped emitting spectrum, and the host crystal structure parameters, the relationship between structure and optical properties is discussed. It is found that the Eu3+ ions occupied Bi3+ sites, and there could be an energy transfer from Bi3+ ions to RE3+ ions.
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Keywords:
78.55.-m
75.50.Pp
78.55.Hx
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Received: 27 March 2008
Published: 26 September 2008
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PACS: |
78.55.-m
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(Photoluminescence, properties and materials)
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75.50.Pp
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(Magnetic semiconductors)
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78.55.Hx
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(Other solid inorganic materials)
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