Chin. Phys. Lett.  2008, Vol. 25 Issue (10): 3750-3752    DOI:
Original Articles |
Chemical Structure of HfO2/Si Interface with Angle-Resolved Synchrotron Radiation Photoemission Spectroscopy
TAN Ting-Ting1, LIU Zheng-Tang1, LIU Wen-Ting1, ZHANG Wen-Hua2
1School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 7100722National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026
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TAN Ting-Ting, LIU Zheng-Tang, LIU Wen-Ting et al  2008 Chin. Phys. Lett. 25 3750-3752
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Abstract

Interfacial chemical structure of HfO2/Si (100) is investigated using angle-resolved synchrotron radiation photoemission spectroscopy (ARPES). The chemical states of Hf show that the Hf 4f binding energy changes with the probing depth and confirms the existence of Hf--Si--O and Hf--Si bonds. The Si 2p spectra are taken to make sure that the interfacial structure includes the Hf silicates, Hf silicides and SiOx. The metallic characteristic of the Hf--Si bonds is confirmed by the valence band spectra. The depth distribution model of this interface is established.

Keywords: 73.20.At      77.55.+f      82.65.Tr     
Received: 04 May 2008      Published: 26 September 2008
PACS:  73.20.At (Surface states, band structure, electron density of states)  
  77.55.+f  
  82.65.Tr  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2008/V25/I10/03750
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TAN Ting-Ting
LIU Zheng-Tang
LIU Wen-Ting
ZHANG Wen-Hua
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