Original Articles |
|
|
|
|
Chemical Structure of HfO2/Si Interface with Angle-Resolved Synchrotron Radiation Photoemission Spectroscopy |
TAN Ting-Ting1, LIU Zheng-Tang1, LIU Wen-Ting1, ZHANG Wen-Hua2 |
1School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 7100722National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026 |
|
Cite this article: |
TAN Ting-Ting, LIU Zheng-Tang, LIU Wen-Ting et al 2008 Chin. Phys. Lett. 25 3750-3752 |
|
|
Abstract Interfacial chemical structure of HfO2/Si (100) is investigated using angle-resolved synchrotron radiation photoemission spectroscopy (ARPES). The chemical states of Hf show that the Hf 4f binding energy changes with the probing depth and confirms the existence of Hf--Si--O and Hf--Si bonds. The Si 2p spectra are taken to make sure that the interfacial structure includes the Hf silicates, Hf silicides and SiOx. The metallic characteristic of the Hf--Si bonds is confirmed by the valence band spectra. The depth distribution model of this interface is established.
|
Keywords:
73.20.At
77.55.+f
82.65.Tr
|
|
Received: 04 May 2008
Published: 26 September 2008
|
|
|
|
|
|
[1] Jiang R, Xie E Q and Wang Z F 2006 Appl. Phys. Lett. 89 2907 [2] Schmeisser D and Zschech E 2006 Mat. Sci. Semicon.Proc. 9 934 [3] Chang S J, Lee W C, Hwang J, Hong M and Kwo J 2008 Thin Solid Films 516 948 [4] Lee J -C, Oh S J, Cho M, Hwang C S and Jung R 2004 Appl. Phys. Lett. 84 1305 [5] Hakala M H, Foster A S, Gavartin J L, Huvu P, Puska M Jand Nieminen R M 2006 J. Appl. Phys. 100 043708 [6] Seo K, Lee D, Poanetta P, Kim H, Kim K and Mclntyre P C2006 Appl. Phys. Lett. 89 42912 [7] Moon T -H, Ham M -H and Myoung J M 2005 Appl. Phys.Lett. 86 102903 [8] Barrett N, Renault O, Damlencourt J F and Martin F 2004 J. Appl. Phys. 96 6362 [9] Milk G D, Wallace R M and Anthony J M 2000 J. Appl.Phys. 87 484 [10] Renault O, Samour D, Damlencourt J F, Blin D, Martin F,Marthon S, Barrett N T and Besson P 2002 Appl. Phys. Lett. 81 3627 [11] Opila R L, Wilk G D, Alam M A, Dover R B and Busch B W2002 Appl. Phys. Lett. 81 1788 [12] Cho M -H, Roh Y S, Whang C N, Jeong K, Nahm S W, Ko D -H,Lee J H, Lee N I and Fujihara K 2002 Appl. Phys. Lett. 81 472 [13] Gutowski M, Jaffe J E, Liu C L, Stoker M, Hegde R I, RaiR S and Tobin P J 2002 Appl. Phys. Lett. 80 1897 [14] Wang S J, Lim P C, Huan A C H, Liu C L, Chai J W, Chow SY, Pan J S, Li Q and Ong C K 2003 Appl. Phys. Lett. 822047 [15] Asano A, Asuha, Maida O, Todokoro Y and Kobayashi H 2002 Appl. Phys. Lett. 80 4552 [16] Scopel W L, Silva S J R, Orellana W and Fazzio A 2004 Appl. Phys. Lett. 84 1492 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|