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Thermal Stability of Reliable Polycrystalline Zirconium Oxide for Nonvolatile Memory Application |
| ZHOU Peng1, LI Jing2, CHEN Liang-Yao2, TANG Ting-Ao1, LIN Yin-Yin1 |
| 1School of Microelectronics and State Key Lab of ASIC and System, Fudan University, Shanghai 2004332Department of Optical Science and Engineering, Fudan University, Shanghai 200433 |
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| Cite this article: |
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ZHOU Peng, LI Jing, CHEN Liang-Yao et al 2008 Chin. Phys. Lett. 25 3742-3745 |
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Abstract Thermal stability of resistive switching of stoichiometric zirconium oxide thin films is investigated for high yielding nonvolatile memory application. The
Al/ZrO2/Al cell fabricated in the conventional device process shows highly reliable switching behaviour between two distinct stable resistance states. The retention capabilities are also tested under various conditions and temperatures. The excellent performance of Al/ZrO2/Al cell can be explained by assuming that anode/ZrO2 interface exists and by conducting filament
forming/rupture mechanism. The device failure is illustrated in terms of permanent conducting filaments formation.
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| Keywords:
72.80.Ga
73.61.Ng
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Received: 23 April 2008
Published: 26 September 2008
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