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Homoepitaxial Growth and Optical Properties of ZnO Polar Nanoleaves |
| ZHANG Chun-Zhi1;GAO Hong1;ZHANG Di1;ZHANG Xi-Tian 1,2 |
| 1Department of Physics, Harbin Normal University, Harbin 1500802Department of Physics, The Chinese University of Hong Kong, Hong Kong |
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ZHANG Chun-Zhi, GAO Hong, ZHANG Di et al 2008 Chin. Phys. Lett. 25 302-305 |
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Abstract Using a mixture of ZnO and Te powders as the source material, ZnO nanoleaves with high yield and uniform morphology are fabricated by thermal evaporation. Each nanoleaf is constructed with a nanowire and a nanodisc on one side of the nanowire near the top. The polygonal nanodisc is in symmetric
distribution in relation to the nanowires and has polar planes ±(0001) as surfaces. A local homoepitaxial growth mechanism of ZnO polar nanodiscs induced by Te is proposed. With thin nanodiscs, the ZnO nanoleaves could be used in nanolasers, sensors, and photoelectronic nanodevices. Room-temperature photoluminescence result implies good crystalline quality of the ZnO nanoleaves.
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| Keywords:
81.05.Dz
81.07.Vb
81.15.Gh
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Received: 27 August 2007
Published: 27 December 2007
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| PACS: |
81.05.Dz
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(II-VI semiconductors)
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81.07.Vb
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(Quantum wires)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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