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Influence of Dopant Concentration on Electroluminescent Performance of Organic White-Light-Emitting Device with Double-Emissive-Layered Structure |
WU Xiao-Ming1,2,3;HUA Yu-Lin1,2,3;YIN Shou-Gen1,2,3;ZHANG Li-Juan1,2,3;WANG Yu1,2,3;HOU Qing-Chuan1,2,3;ZHANG Jun-Mei4 |
1Institute of Material Physics, Tianjin University of Technology, Tianjin 3003842Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), Tianjin University of Technology, Tianjin 3001913Tianjin Key Laboratory of Photoelectric Materials and Device, Tianjin 3003844Station 58, Tianjin Supervision Bureau of Quality and Technology, Tianjin300381 |
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Cite this article: |
WU Xiao-Ming, HUA Yu-Lin, YIN Shou-Gen et al 2008 Chin. Phys. Lett. 25 294-297 |
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Abstract A novel phosphorescent organic white-light-emitting device (WOLED) with configuration of ITO/NPB/CBP: TBPe:rubrene/Zn(BTZ)2:Ir(piq)2(acac)/Zn(BTZ)2/Mg:Ag is fabricated successfully, where the phosphorescent dye bis (1-(phenyl)isoquinoline) iridium (III) acetylanetonate (Ir(piq)2(acac)) doped into bis-(2-(2-hydroxyphenyl) benzothiazole)zinc (Zn(BTZ)2) (greenish-blue emitting material with electron transport character) as the red emitting layer, and fluorescent dye 2,5,8,11-tetra-tertbutylperylene (TBPe) and 5,6,11,12-tetraphenyl-naphthacene (rubrene) together doped into 4,4'-N,N'-dicarbazole-biphenyl (CBP) (ambipolar conductivity material) as the blue-orange emitting layer, respectively. The two emitting layers are sandwiched between the hole-transport layer N,N'-biphenyl-N, N'-bis (1-naphthyl)-(1,1'-biphenyl)-4,4'-diamine (NPB) and electron-transport layer (Zn(BTZ)2). The optimum device turns on at the driving voltage of 4.5V. A maximum external quantum efficiency of 1.53% and brightness 15000cd/m2 are presented. The best point of the Commission Internationale de l'Eclairage (CIE) coordinates locates at (0.335, 0.338) at about 13V. Moreover, we also discuss how to achieve the bright pure white light through optimizing the doping concentration of each dye from the viewpoint of energy transfer process.
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Keywords:
78.60.Fi
85.60.Jb
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Received: 19 September 2007
Published: 27 December 2007
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