| Original Articles |
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Hydrogen Sensors Based on AlGaN/AlN/GaN Schottky Diodes |
| WANG Xin-Hua;WANG Xiao-Liang;FENG Chun;XIAO Hong-Ling;YANG Cui-Bai;WANG Jun-Xi ;WANG Bao-Zhu;RAN Jun-Xue; WANG Cui-Mei |
| Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| Cite this article: |
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WANG Xin-Hua, WANG Xiao-Liang, FENG Chun et al 2008 Chin. Phys. Lett. 25 266-269 |
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Abstract Pt/AlGaN/AlN/GaN Schottky diodes are fabricated and characterized for hydrogen sensing. The Pt Schottky contact and the Ti/Al/Ni/Au ohmic contact are formed by evaporation. Both the forward and reverse currents of the device increase greatly when exposed to hydrogen gas. A shift of 0.3V at 300K is obtained at a fixed forward current after switching from N2 to 10%H2+N2. The sensor responses under different concentrations from 50ppm H2 to 10%H2+N2 at 373K are investigated. Time dependences of the device forward current at 0.5V forward bias in N2 and air atmosphere at 300 and 373K are compared. Oxygen in air accelerates the desorption of the hydrogen and the recovery of the sensor. Finally, the decrease of the Schottky barrier height and sensitivity of the sensor are calculated.
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| Keywords:
73.61.Ey
07.07.Df
73.40.Ns
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Received: 30 August 2007
Published: 27 December 2007
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| PACS: |
73.61.Ey
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(III-V semiconductors)
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07.07.Df
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(Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing)
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73.40.Ns
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(Metal-nonmetal contacts)
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