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Investigation of SOI Substrates Incorporated with Buried MoSi2 for High Frequency SiGe HBTs |
| CHEN Chao1,2;LIU Wei-Li1;MA Xiao-Bo1,2;SHEN Qin-Wo1;SONG Zhi-Tang1;LIN Cheng-Lu1 |
| 1Nano Technology Laboratory, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 2000502Graduate University of Chinese Academy of Sciences, Beijing 100049 |
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| Cite this article: |
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CHEN Chao, LIU Wei-Li, MA Xiao-Bo et al 2008 Chin. Phys. Lett. 25 227-229 |
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Abstract Highly arsenic-doped Si-on-insulator (SOI) substrate incorporated with buried MoSi2 layers is fabricated aiming at decreasing the collector series resistance of SiGe heterojunction bipolar transistors (HBTs) on SOI, thereby enhancing cutoff frequency (fT) performance and increasing the maximum value of fT (fTMAX). The fT performance at medium current is enhanced and current required for fT=15GHz is reduced by half. The value of fTMAX is improved by 30%.
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| Keywords:
61.82.Fk
68.55.Jk
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Received: 21 May 2007
Published: 27 December 2007
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[1] Rieh J S, Jagannathan B, Chen H et al 2002 IEDMTechnical Digest (San Francisco, CA, USA, 9--11 December 2002) p 771
[2] Cai J, Ajmera A and Park H 2002 Symposium on VLSI Technology,Digest of Technical Papers (Hilton Hawaiian Village, Honolulu, HI,11--15 June 2002) p 172
[3] Bain M et al %, El Mubarek H A W, Bonar J M2005 IEEETrans. Electron Devices 52 317
[4] Gamble H S et al %, Armstrong B M, Baine P2001 Solid-State Electron. 45 551
[5] Zhu S Y, Ru G P and Huang Y P 2001 Solid-State andIntegrated-Circuit Technology, IEEE 6th InternationalConference (Shanghai, China, 22--25 October 2001) p 22
[6] Yallup K %et al, Wilson R, Quinn C1995 IEEEInternational SOI Conference (Tucson, Arizona, USA, 3-5 October 1995)137
[7] Nayar V et al %, Russell J, Carline R T1998 Thin SolidFilms 313 276
[8] Morimoto T %et al , Ohguro T, Momose H S1995 IEEE Trans.Electron. Devices 42 915
[9] Ashburn P 2003 SiGe Heterojunction BipolarTransistors (New York: Wiley) p 78
[10] Maruka S P 1983 Silicide for VLSI Applications (New York:Academic) p 31 |
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