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Temperature-Dependent Electron Transport in In0.5Ga0.5P/GaAs Grown by MOVPE |
| S. Acar1;A. Yildiz2;M. Kasap1;M. Bosi3 |
| 1Department of Physics, Faculty of Science and Arts, University of Gazi, Teknikokular, 06500 Ankara, Turkey2Department of Physics, Faculty of Science and Arts, University of Ahi Evran, Ki rc sehir, Turkey3IMEM-CNR Institute, Parco area delle Scienze 37/A, 43010 Fontanini (Parma), Italy |
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| Cite this article: |
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S. Acar, A. Yildiz, M. Kasap et al 2007 Chin. Phys. Lett. 24 2373-2375 |
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Abstract Hall effect measurements in undoped In0.5Ga0.5P/GaAs alloy grown by metal organic vapour-phase epitaxy (MOVPE) have been carried out in the temperature range 15--350K. The experimental results are analysed using a two-band model including conduction band transport calculated using an iterative solution of the Boltzmann equation. A good agreement was obtained between theory and experiment. The impurity contents of In0.5Ga0.5P/GaAs alloy, such as donor density ND, acceptor density NA and donor activation
energy εD, were also determined.
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| Keywords:
72.20.My
72.20.Fr
72.80.Ey
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Received: 08 March 2007
Published: 25 July 2007
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| PACS: |
72.20.My
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(Galvanomagnetic and other magnetotransport effects)
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72.20.Fr
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(Low-field transport and mobility; piezoresistance)
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72.80.Ey
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(III-V and II-VI semiconductors)
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