| Original Articles |
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In-Situ High Pressure Raman Spectrum and Electrical Property of PbMoO4 |
| YU Cui-Ling1;YU Qing-Jiang1;GAO Chun-Xiao1;LIU Bao1;HAO Ai-Min1;HE Chun-Yuan1;HUANG Xiao-Wei1;ZHANG Dong-Mei1;CUI Xiao-Yan1;LI Ming1;LI Dong-Mei1;Ma Yan-Zhang2;ZOU Guang-Tian1 |
| 1State Key Laboratory for Superhard Materials, Institute of Atomic and Molecular Physics, Jilin University, Changchun 1300122Department of Mechanical Engineering, Texas Tech University, Lubbock, TX 79409 |
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| Cite this article: |
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YU Cui-Ling, YU Qing-Jiang, GAO Chun-Xiao et al 2007 Chin. Phys. Lett. 24 2204-2207 |
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Abstract In-situ high pressure Raman spectra and electrical conductivity measurements of scheelite-structure compound PbMoO4 are presented. The Raman spectrum of PbMoO4 is determined up to 26.5GPa on a powdered sample in a diamond anvil cell (DAC) under nonhydrostatic conditions. The PbMoO4 gradually experiences the transformation from the crystal to amorphous between 9.2 and 12.5GPa. The crystal to amorphous transition may be due to the mechanical deformation and the crystallographic transformation. Furthermore, the electrical conductivity of PbMoO4 is in situ measured accurately using a microcircuit fabricated on a DAC based on the van der Pauw method. The results show that the electrical conductivity of PbMoO4 increases with increases of pressure and temperature. At 26.5GPa, the electrical conductivity value of PbMoO4 at 295K is 1.93×10-4S/cm, while it raises by one order of magnitude at 430K and reached 3.33×10-3S/cm. However, at 430K, compared with the electrical conductivity value of PbMoO4 at 26.5GPa, it
drops by about two order magnitude at 7.4GPa and achieves 2.81×10-5S/cm. This indicates that the effect of pressure on the electrical conductivity of PbMoO4 is more obvious than that of temperature.
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| Keywords:
07.35.+k
64.60.-i
72.20.-i
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Received: 11 February 2007
Published: 25 July 2007
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| PACS: |
07.35.+k
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(High-pressure apparatus; shock tubes; diamond anvil cells)
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64.60.-i
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(General studies of phase transitions)
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72.20.-i
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(Conductivity phenomena in semiconductors and insulators)
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