Original Articles |
|
|
|
|
Cr-Doped InAs Self-Organized Diluted Magnetic Quantum Dots ith Room-Temperature Ferromagnetism |
ZHENG Yu-Hong;ZHAO Jian-Hua;BI Jing-Feng;WANG Wei-Zhu;JI Yang;WU Xiao-Guang;XIA Jian-Bai |
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
|
Cite this article: |
ZHENG Yu-Hong, ZHAO Jian-Hua, BI Jing-Feng et al 2007 Chin. Phys. Lett. 24 2118-2121 |
|
|
Abstract Cr-doped InAs self-organized diluted magnetic quantum dots (QDs) are grown by low-temperature molecular-beam epitaxy. Magnetic measurements reveal that the Curie temperature of all the InAs:Cr QDs layers with Cr/In flux ratio changing from 0.026 to 0.18 is beyond 400K. High-resolution cross sectional transmission electron microscopy images indicate that InAs:Cr QDs are of the zincblende structure. Possible origins responsible for the high Curie temperature are discussed.
|
Keywords:
81.05.Zx
75.50.Pp
81.15.Hi
|
|
Received: 08 March 2007
Published: 25 June 2007
|
|
PACS: |
81.05.Zx
|
(New materials: theory, design, and fabrication)
|
|
75.50.Pp
|
(Magnetic semiconductors)
|
|
81.15.Hi
|
(Molecular, atomic, ion, and chemical beam epitaxy)
|
|
|
|
|
[1] Ohno H, Shen A, Matsukara F, Oiwa A, Endo A, Katsumoto Sand Iye Y 1996 Appl. Phys. Lett. 69 363 [2] Wang K Y, Campion R P, Edmonds K W, Sawicki M, Dietl T,Foxon C T and Gallagher B L 2005 AIP Conf. Proc. 772333 [3] Munekata H, Ohno H, von Moln\'ar S, Segm\"uller A, ChangL L and Esaki L 1989 Phys. Rev. Lett. 63 1849 [4] Schallenberg T and Munekata H 2006 Appl. Phys.Lett. 89 042507 [5] Loss D and DiVincenzo D P 1998 Phys. Rev. A 57 120 [6] DiVincenzo D P, Bacon D, Kempek J, Burkard G and WhaleyK B 2000 Nature 408 339 [7] Guo S P, Ohno H, Shen A, Masukura F and Ohno Y 1998 Appl. Surf. Sci. 130--132 797 [8] Ofuchi H, Kubo T, Tabuchi M, Takeda Y, Matsukura F, GuoS P, Shen A and Ohno H 2001 J. Appl. Phys. 89 66 [9] Jeon H C, Chung K J, Kang T W, Kim T W, Yu Y J, Jhe Wand Song S A 2004 Current Appl. Phys. 4 213 [10] Chen Y F, Lee W N, Huang J H, Chin T S, Huang R T, ChenF R, Kai J J, Aravind K, Lin I N and Ku H C 2005 J. Vac. Sci.Technol. B 23 1376 [11] Holub M, Chakrabarti S, Fathpour S, Bhattacharya P, LeiY and Ghosh S 2004 Appl. Phys. Lett. 85 973 [12] Chakrabarti S, Holub M, Bhattacharya P, Mishima T,Santos M, Johnson M and Blom D 2005 Nano. Lett. 5 209 [13] Guo S P, Shen A, Yasuda H, Ohno Y, Matsukura F and OhnoH 2000 J. Cryst. Growth 208 799 [14] Dietl T, Ohno H and Matsukura F 2001 Phys. Rev. B 63 195205 [15] Qu F and Hawrylak P 2006 Phys. Rev. Lett. 96 157201 [16] Fernandez-Rossier J and Brey L 2004 Phys. Rev.Lett. 93 117201 [17] Kacman P 2001 Semicond. Sci. Technol. 16R25 [18] van Schilfgaarde M and Mryasov O N 2001 Phys.Rev. B 63 233205 [19] Akinaga H, Manago T and Shirai M 2000 Jpn. J.Appl. Phys. 39 L1118 [20] Bi J F, Zhao J H, Deng J J, Zheng Y H, Li S S, Wu X Gand Jia Q J 2006 Appl Phys. Lett. 88 142509 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|