Dependence of Limited Growth Rate of High-Quality Gem Diamond on Growth Conditions

Chin. Phys. Lett.

2007, Vol. 24

Issue (7): 2115-2117 DOI:

Original Articles

Dependence of Limited Growth Rate of High-Quality Gem Diamond on Growth Conditions

TIAN Yu¹;MA Hong-An¹;LI Shang-Sheng¹;XIAO Hong-Yu¹;ZHANG Ya-Fei¹;HUANG Guo-Feng¹;MA Li-Qiu¹;JIA Xiao-Peng^1,2

¹National Laboratory of Superhard Materials, Jilin University, Changchun 130012²Henan Polytechnic University, Jiaozuo 454000

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TIAN Yu, MA Hong-An, LI Shang-Sheng et al 2007 Chin. Phys. Lett. 24 2115-2117

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Abstract The growth rate of diamond has been investigated for a long time and researchers have been attempting to enhance the growth rate of high-quality gem diamond infinitely. However, it has been found according to previous research results that the quality of diamond is debased with the increase of growth rate. Thus, under specific conditions, the growth rate of high-quality diamond cannot exceed a limited value that is called the limited growth rate of diamond. We synthesize a series of type Ib gem diamonds by temperature gradient method under high pressure and high temperature (HPHT) using the
as-grown {100} face. The dependence of limited growth rate on growth conditions is studied. The results show that the limited growth rate increases when synthetic temperature decreases, also when growth time is prolonged.

Keywords: 81.05.Uw 81.10.Aj 81.10.Dn 81.10.-h

Received: 17 March 2007 Published: 25 June 2007

PACS:	81.05.Uw
	81.10.Aj	(Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
	81.10.Dn	(Growth from solutions)
	81.10.-h	(Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2007/V24/I7/02115

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Articles by authors
	TIAN Yu
	MA Hong-An
	LI Shang-Sheng
	XIAO Hong-Yu
	ZHANG Ya-Fei
	HUANG Guo-Feng
	MA Li-Qiu
	JIA Xiao-Peng

[1] Strong H M and Wentorf R H Jr 1972 Naturwissenschaften 59 1
[2] Strong H M and Chrenko R M 1971 J. Phys. Chem. 75 1838
[3] Tian Y and Ma H A et al 2006 Diamond and AbrasivesEngineering 151 5
[4] Sumiya H, Toda N and Satoh S 2002 J. Crystal Growth 237-2391281
[5] Sumiya H and Satoh S 1996 Diamond Relat. Mater. 5 1359
[6] Sumiya H, Toda N and Satoh S 2000 New Diamond Frontier CarbonTech. 10 233
[7] Burns R C et al 1999 Diamond Relat. Mater. 8 1433
[8] Kiflawi I et al 2002 Diamond Relat. Mater. 11 204
[9] Jia X P et al 1999 Diamond Relat. Mater. 8 1895
[10] Zang C Y et al 2004 Chin. Phys. Lett. 21 1684
[11] Wang X C et al 2005 Chin. Phys. Lett. 22 1800
[12] Ho S S et al Industrial Diamond Rev. 28-32

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