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Room-Temperature Ferromagnetic ZnMnO Thin Films Synthesized by Plasma Enhanced Chemical Vapour Deposition Method |
| LIN Ying-Bin1;LU Zhi-Hai1;ZOU Wen-Qin1;LU Zhong-Lin1;XU Jian-Ping1;JI Jian-Ti1;LIU Xing-Chong1;WANG Jian-Feng1;LV Li-Ya1;ZHANG Feng-Ming1;DU You-Wei1;HUANG Zhi-Gao2;ZHENG Jian-Guo3 |
| 1The National Laboratory of Solid State Microstructures, the Jiangsu Provincial Laboratory for Nanotechnology, Department of Physics, Nanjing University, Nanjing 2100932Department of Physics, Fujian Normal University, Fuzhou 3500073Nanomaterials Characterization and Fabrication Facility, University of California, Irvine, Irvine, CA 92697, U.S.A. |
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LIN Ying-Bin, LU Zhi-Hai, ZOU Wen-Qin et al 2007 Chin. Phys. Lett. 24 2085-2087 |
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Abstract Room-temperature ferromagnetic Mn-doped ZnO films are grown on Si (001)
substrates by plasma enhanced chemical vapour deposition (PECVD). X-ray
diffraction measurements reveal that the Zn1-xMnxO films have the single-phase wurtzite structure. X-ray photoelectron spectroscopy indicates the existence of Mn2+ ions in Mn-doped ZnO films. Furthermore, the decreasing additional Raman peak with increasing Mn-doping is considered to relate to the substitution of Mn ions for the Zn ions in ZnO lattice. Superconducting quantum interference device (SQUID) measurements demonstrate that Mn-doped ZnO films have ferromagnetic behaviour at room temperature.
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75.70.Pp
81.15.Gh
78.30.Cp
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Received: 18 March 2007
Published: 25 June 2007
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