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Correlation between Light Emissions from Amorphous-Si:H/SiO2 and nc-Si/SiO2 Multilayers |
| MA Zhong-Yuan; HAN Pei-Gao;LI Wei;CHEN De-Yuan;WEI De-Yuan;QIAN Bo;LI Wei;XU Jun;XU Ling;HUANG Xin-Fan; CHEN Kun-Ji;FENG Duan |
| State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 |
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| Cite this article: |
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MA Zhong-Yuan, HAN Pei-Gao, LI Wei et al 2007 Chin. Phys. Lett. 24 2064-2067 |
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Abstract We investigate the properties of light emission from amorphous-Si:H/SiO2 and nc-Si/SiO2 multilayers (MLs). The size dependence of light emission is well exhibited when the a-Si:H sublayer thickness is thinner than 4nm and the interface states are well passivated by hydrogen. For the nc-Si/SiO2 MLs, the oxygen modified interface states and nanocrystalline silicon play a predominant role in the properties of light emission. It is found that the light emission from nc-Si/SiO2 is in agreement with the model of interface state combining with quantum confinement when the size of nc-Si is smaller than 4nm. The role of hydrogen and oxygen is discussed in detail.
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73.21.Ac
73.20.r
78.55.-m
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Received: 09 November 2006
Published: 25 June 2007
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