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X-Ray Photoelectron Spectroscopy and Reflection High Energy Electron Diffraction of Epitaxial Growth SiC on Si(100) Using C60 and Si |
| LIU Yan-Fang;LIU Jin-Feng;XU Peng-Shou;PAN Hai-Bin |
| National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029 |
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| Cite this article: |
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LIU Yan-Fang, LIU Jin-Feng, XU Peng-Shou et al 2007 Chin. Phys. Lett. 24 2022-2024 |
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Abstract The formation of silicon carbide upon deposition of C60 and Si on Si(100) surface at 850°C is studied via x-ray photoelectron spectroscopy and reflection high energy electron diffraction (RHEED). The C 1s, O 1s and Si 2p core-level spectra and the RHEED patterns indicate the formation of 3C--SiC
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| Keywords:
61.14.Hg
71.20.Ny
79.60.-i
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Received: 18 February 2007
Published: 25 June 2007
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