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Improved Performance of Organic Thin Film Transistor with an Inorganic Oxide/Polymer Double-Layer Insulator |
| ZHAO Yi-Hua;DONG Gui-Fang;WANG Li-Duo;QIU Yong |
| Key Laboratory of Organic Optoelectronics & Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084 |
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| Cite this article: |
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ZHAO Yi-Hua, DONG Gui-Fang, WANG Li-Duo et al 2007 Chin. Phys. Lett. 24 1664-1667 |
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Abstract We employ the Ta2O5/PVP (poly-4-vinylphenol) double-layer gate insulator to improve the performance of pentacene thin-film transistors. It is found that the double-layer insulator has low leakage current, smooth surface and considerably high capacitance. Compared to Ta2O5 insulator layers, the device with the Ta2O5/PVP double-layer insulator exhibits an enhancement
of the field-effect mobility from 0.21 to 0.54cm2/Vs, and the decreasing threshold voltage from 4.38V to -2.5V. The results suggest that the Ta2O5/PVP double-layer insulator is a potential gate insulator for fabricating OTFTs with good electrical performance.
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| Keywords:
61.82.Fk
61.82.Ms
61.82.Pv
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Received: 27 November 2006
Published: 17 May 2007
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