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Detection Wavelength of Strained InxGa1-x As/GaAs Very-Long-Wavelength Quantum Well Infrared Photodetectors |
| XIONG Da-Yuan;LI Ning;LI Zhi-Feng;ZHEN Hong-Lou;LU Wei |
| National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 |
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XIONG Da-Yuan, LI Ning, LI Zhi-Feng et al 2007 Chin. Phys. Lett. 24 1403-1406 |
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Abstract Detection wavelength is one of the key performance indices of infrared
photodetectors. We study the character of detection wavelength of the
strained InxGa1-x As/GaAs very-long-wavelength (>12μm) quantum well infrared photodetectors (VLW-QWIPs) characterized by the photoluminescence (PL) and photocurrent (PC) measurements. Based on the theoretical calculation and experimental data, we have built a practical model for the InxGa1-x As/GaAs strained VLW-QWIPs, from which the interband transitions, intersubband transition and peak detection wavelength can be determined. Afterwards, the dependences of detection wavelength and device operation mode on the In mole fraction and InxGa 1-x As well width are presented, which will be helpful for device design and optimization.
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| Keywords:
85.60.Gz
85.60.Bt
85.35.Be
68.65.Fg
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Received: 03 January 2007
Published: 23 April 2007
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| PACS: |
85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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85.60.Bt
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(Optoelectronic device characterization, design, and modeling)
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85.35.Be
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(Quantum well devices (quantum dots, quantum wires, etc.))
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68.65.Fg
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(Quantum wells)
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[1] Levine B F et al 1992 J. Appl. Phys. 71 5130
[2] Levine B F 1993 J. Appl. Phys. 74 R1-81
[3] Rogalski A 1997 Infrared Phys. Technol. 38 327
[4] Laidig W D, Lin Y F and Caldwell P J 1985 J. Appl. Phys. 57 33
[5] Chiang J C et al 1996 Appl. Phys. Lett. 69 2412
[6] Perera A G U et al 2000 Appl. Phys. Lett. 77 741
[7] Gunapala S D 1992 Appl. Phys. Lett. 60 636
[8] Gunapala S D Appl. Phys. Lett. 64 2288
[9] Elman B et al 1989 Appl. Phys. Lett. 55 1659
[10] Vurgaftman I, Meyer J R and Ram-Mohan L R 2001 J. Appl.Phys. 89 5815
[11] Andersson T G et al 1988 Phys. Rev. B 37 4032
[12] Arent D J et al 1989 J. Appl. Phys. 66 1739
[13] Fritz I J et al 1986 Appl. Phys. Lett. 48 1606
[14] Pollak F H and Cardona M 1968 Phys. Rev. 172 816
[15] Pearsall T P, Bean J C and Hull R 1986 Phys. Rev. B 33 6821
[16] Gunapala S D et al 1997 IEEE Trans. Electron. Devices 44 45 |
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