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Photoinduced Resistance Change in an Oxygen-Deficient La 0.9 Sr 0.1 MnO 3-δ Thin Film |
| YAN Zi-Jie1;YUAN Xiao1;GAO Guo-Mian2;LUO Bing-Cheng2;JIN Ke-Xin2;CHEN Chang-Le2 |
| 1School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 2Department of Applied Physics, Northwestern Polytechnical University, Xi'an 710072 |
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| Cite this article: |
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YAN Zi-Jie, YUAN Xiao, GAO Guo-Mian et al 2007 Chin. Phys. Lett. 24 1397-1399 |
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Abstract Photoinduced resistance change (△R/R) in an oxygen-deficient La0.9Sr0.1MnO3-δ thin film is studied. At room temperature, the resistance change of about 30% and response time of about 75ns are observed under the illumination with a 532nm laser pulse of 7ns and light power of 750mW. It is also found that △R/R changes with the light power. The phenomena are explained in terms of the photoinduced hole carriers and localized insulator-to-metal transition, which may have potential applications in optoelectronic
devices.
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| Keywords:
81.40.Tv
75.47.Lx
75.90.+w
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Received: 21 December 2006
Published: 23 April 2007
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| PACS: |
81.40.Tv
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(Optical and dielectric properties related to treatment conditions)
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75.47.Lx
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(Magnetic oxides)
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75.90.+w
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(Other topics in magnetic properties and materials)
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