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Structural, Optical and Electrical Properties of ZnS/Porous Silicon Heterostructures |
| WANG Cai-Feng1;LI Qing-Shan 1,2;LV Lei 1;ZHANG Li-Chun 1,QI Hong-Xia 1;CHEN Hou3 |
| 1 Department of Physics, Qufu Normal University, Shandong 2731652 Department of Physics, Ludong University, Shandong 2640253 School of Chemistry and Materials Science, Ludong University, Shandong 264025 |
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| Cite this article: |
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WANG Cai-Feng, LI Qing-Shan, LV Lei et al 2007 Chin. Phys. Lett. 24 825-827 |
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Abstract ZnS films are deposited by pulsed laser deposition on porous silicon (PS) substrates formed by electrochemical anodization of p-type (100) silicon wafer. Scanning electron microscope images reveal that the surface of ZnS films is unsmoothed, and there are some cracks in the ZnS films due to the roughness of the PS surface. The x-ray diffraction patterns show that the ZnS films on PS surface are grown in preferring orientation along cubic phase β-ZnS (111) direction. White light emission is obtained by combining the blue-green emission from ZnS films with the orange--red emission from PS layers. Based on the I--V characteristic, the ZnS/PS heterojunction exhibits the rectifying junction behaviour, and an ideality factor n is calculated to be 77 from the I--V plot.
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| Keywords:
78.55.Et
78.55.Mb
78.67.Pt
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Received: 05 September 2006
Published: 08 February 2007
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| PACS: |
78.55.Et
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(II-VI semiconductors)
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78.55.Mb
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(Porous materials)
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78.67.Pt
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(Multilayers; superlattices; photonic structures; metamaterials)
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