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Electronic Structure of Si 1-x IVx/Si Superlattices on Si (001) |
| CHEN Jie1;LÜ Tie-Yu1;HUANG Mei-Chun 1,2 |
| Department of Physics, Xiamen University, Xiamen 3610052CCAST (World Laboratory), PO Box 8730, Beijing 100080 |
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| Cite this article: |
CHEN Jie, L
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Abstract We have preformed systematical ab initio studies of the structural and electronic properties of short-period Si 1-x IVx/Si/Si (x=0.125, 0.25, 0.5, IV=Ge, Sn) superlattices (SLs) grown along the [001] direction on bulk Si. The present calculations reveal that the Si 0.875 Ge 0.125/Si, Si 0.75 Ge 0.25/Si and
Si 0.875 Ge 0.125/Si are the Γ-point direct bandgap semiconductors. The technological importance lies in the expectation that the direct gap Si 1-x IVx/Si/Si SLs may be used as components in integrated optoelectronic devices, in conjunction with the already well-established and highly advanced silicon technology.
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| Keywords:
71.15.Mb
71.20.-b
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Received: 23 August 2006
Published: 08 February 2007
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| PACS: |
71.15.Mb
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(Density functional theory, local density approximation, gradient and other corrections)
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71.20.-b
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(Electron density of states and band structure of crystalline solids)
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[1] Davis R F 1991 Proc. IEEE 79 702
[2] Edgar J H 1992 J. Mater. Res. 7 235
[3] Eddy J C R, Moustakas T D and Scanlon J 1993 J. Appl.Phys. 73 448
[4] Pearsall T P, Bevk J, Feldman L C, Bonar J M, Mannaerts J P andOurmazd A 1987 Phys. Rev. Lett. 58 729
[5] Froyen S, Wood D M and Zunger A 1988 Phys. Rev. B 37 6893
[6] Venezuela P, Dalpian G M, Silva A J R and Fazzio A 2001 Phys. Rev. B 64 193202
[7] Schmid U, Christensen N E, Alouani M and Cardona M 1991 Phys. Rev. B 43 14597
[8] Cerdeira F, Pinczuk A and Bean J C 1984 Phys. Rev. B 31 1202
[9] Tserbak C, Polatoglou H M and Theodorou G 1993 Phys.Rev. B 47 7104
[10] Willatzen M, Voon L C L Y, Santos P V, Cardona M, Munzar D andChristensen N E 1995 Phys. Rev. B 52 5070
[11] Munzar D and Christensen N E 1994 Phys. Rev. B 49 11238
[12] D\'avila M E, Avila J, Asensio M C and Lay G L 2004 Phys.Rev. B 70 241308
[13] Zhang P H, Crespi V H, Chang E, Louie S G and Cohen M L 2001 Nature 409 69
[14] Horsfield A P and Ashcroft N W 1992 J. Phys. Condens.Matter 4 7333
[15] Johnson K A and Ashcroft N W 1996 Phys. Rev. B 54 14480
[16] Huang M C and Zhu Z Z 2001 The 4th Asian workshop onfirst-principles electronic structure calculations p12
[17] Huang M C, Zhang J L, Li H P and Zhu Z Z 2002 Int. J.Mod. Phys. B 16 4279
[18] Kresse G and Furthm\"uller J 1996 Phys. Rev. B 5411169
[19] Kresse G and Joubert D 1999 Phys. Rev. B 59 1758
[20] Kresse G and Hafner J 1994 J. Phys: Condens. Matter 6 8245
[21] Bean J C, Sheng T T, Feldman L C, Fiory A T and Lynch R T 1984 Appl. Phys. Lett. 44 102
[22] Cerdeira F, Pinczuk A, Bean J C, Batlogg B and Wilson B A 1984 Appl. Phys. Lett. 45 1138
[23] Fiory A T, Bean J C, Feldman L C and Robinson I K 1984 J. Appl. Phys. 56 1227 |
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