| Original Articles |
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Nitrogen and Silicon Co-Doping of Ge2Sb2Te5 Thin Films for Improving Phase Change Memory Performance |
| CAI Yan-Fei 1;ZHOU Peng 1;LIN Yin-Yin 1;TANG Ting-Ao 1; CHEN Liang-Yao 2;LI Jing 2;QIAO Bao-Wei 3;LAI Yun-Feng 3;FENG Jie 3;CAI Bing-Chu 3;CHEN Bomy4 |
| 1Department of Microelectronics, ASIC & System State Key Lab, Fudan University, Shanghai 2004332Department of Optical Science and Engineering, Fudan University, Shanghai 2004333Research Institute of Micro/Nanometer Technology, Shanghai Jiao Tong University, Shanghai 2000304Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA94086, U.S.A |
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| Cite this article: |
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CAI Yan-Fei, ZHOU Peng, LIN Yin-Yin et al 2007 Chin. Phys. Lett. 24 781-783 |
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Abstract Electrical properties and phase structures of (Si+N)-codoped Ge2Sb2Te5 (GST) for phase change memory are investigated to improve the memory erformance. Compared to the films with N or Si dopants only in previous reports, the (Si+N)-doped GST has a remarkable improvement of crystalline resistivity of about 104m Ωcm. The Fourier-transform infrared spectroscopy
spectrum reveals the Si--N bonds formation in the film. X-ray diffraction patterns show that the grain size is reduced due to the crystallization inhibition of the amorphous GST by SiNx, which results in higher crystalline resistivity. This is very useful to reduce writing current for phase change memory applications.
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| Keywords:
61.43.Dq
61.72.Ww
81.30.Hd
84.37.+q
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Received: 10 October 2006
Published: 08 February 2007
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| PACS: |
61.43.Dq
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(Amorphous semiconductors, metals, and alloys)
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61.72.Ww
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81.30.Hd
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(Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder)
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84.37.+q
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(Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))
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[1] Lai S and Lowrey L 2001 IEDM 803-6
[2] Weidenhof V, Friedrich I, Ziegler S and Wutting M 2001 J.Appl. Phys. 89 3168
[3] Jeong T H, Kim M R, Seo H, Kim S J and Kim S Y 1999 J.Appl. Phys. 86 774
[4] Friedrich I, Weidenhof V, Njoroge W, Franz P and Wuttig M 2000 J. Appl. Phys. 87 4130
[5] Privitera S et al %, Rimini E, Bongiorno C, Zonca R, Pirovano A and Bez R2003 J. Appl. Phys. 94 4409
[6] Lai S 2003 IEDM Tech. Digest. 255
[7] Horii H, Yi J H, Park J Het al 2003 Symposium on VLSI Technology Digest of Technical paper 177
[8] Kang D H, Ahn D H, Kim K B, Webb J F and Yi K W 2003 J.Appl. Phys. 94 3536
[9] Pellizzer F, Pirovano A et al 2004 Symposium on VLSITechnology Digest of Technical paper 18
[10] Hwang Y N, Lee S H, Ahn S J, Lee S Y, Ryoo K C, Hong H S et al 2003 IEDM Tech. Digit. p 893
[11] Qiao B W et al %, Feng J, Lai Y F, Ling Y, Lin Y Y, Tang T A et al2006 Chin. Phys. Lett. 23 172
[12] Kim S M et al%, Shin M J, Choi D J, Lee K N, Hong S K and Park Y J2004 Thin Solid Films 469 322
[13] Lai Y F et al %, Qiao B W, Feng J, Ling Y, Lai L Z, Lin Y Y et al2005 J. Electron. Mater. 34 176
[14] Molinari M, Rinnert H and Vergnat M 2001 Appl. Phys. Lett. 79 2172
[15] Yamada N et al%, Ohno E, Nishiuchi K, Akahira N and Takao M1991 J. Appl. Phys. 69 2849
[16] Mayadas A F and Shatzkes M 1970 Phys. Rev. B 1 1382 |
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