Chin. Phys. Lett.  2007, Vol. 24 Issue (3): 717-720    DOI:
Original Articles |
Low Threshold Current Density Operation of Strain-Compensated Quantum Cascade Laser
SHAO Ye;LI Lu;LIU Jun-Qi;LIU Feng-Qi;WANG Zhan-Guo
Key Laboratory of Semiconductor Materials, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
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SHAO Ye, LI Lu, LIU Jun-Qi et al  2007 Chin. Phys. Lett. 24 717-720
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Abstract We report the low threshold current density operation of strain-compensated
In 0.64 Ga 0.36 As/In 0.38 Al 0.62 As quantum cascade lasers emitting near 4.94μm. By employing an enlarged strain-compensated structure and optimizing the injector doping density, a rather low threshold current density of 0.57kA/cm2 at 80K is achieved for an uncoated 20-μm-wide and 2.5-mm-long laser.
Keywords: 42.55.Px      85.60.Bt      71.55.Eq      81.15.Hi     
Received: 01 November 2006      Published: 08 February 2007
PACS:  42.55.Px (Semiconductor lasers; laser diodes)  
  85.60.Bt (Optoelectronic device characterization, design, and modeling)  
  71.55.Eq (III-V semiconductors)  
  81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2007/V24/I3/0717
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SHAO Ye
LI Lu
LIU Jun-Qi
LIU Feng-Qi
WANG Zhan-Guo
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