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Optimization of Metamorphic InGaAs Quantum Wells on GaAs Grown by Molecular Beam Epitaxy |
| WU Bing-Peng;WU Dong-Hai;NI Hai-Qiao;HUANG She-Song;ZHAN Feng;XIONG Yong-Hua;XU Ying-Qiang;NIU Zhi-Chuan |
| State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| Cite this article: |
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WU Bing-Peng, WU Dong-Hai, NI Hai-Qiao et al 2007 Chin. Phys. Lett. 24 3543-3546 |
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Abstract We investigate the molecular beam epitaxy growth of metamorphic InxGa1-xAs materials (x up to 0.5) on GaAs substrates systematically. Optimization of structure design and growth parameters is aimed at obtaining smooth surface and high optical quality. The optimized structures have an average surface roughness of 0.9--1.8nm. It is also proven by PL measurements that the optical properties of high indium content (55%) InGaAs quantum wells are improved apparently by defect reduction technique and by introducing Sb as a surfactant. These provide us new ways for growing device quality metamorphic structures on GaAs substrates with long-wavelength emissions.
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| Keywords:
78.55.Cr
68.65.Fg
68.65.Hb
81.15.Hi
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Received: 19 July 2007
Published: 03 December 2007
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| PACS: |
78.55.Cr
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(III-V semiconductors)
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68.65.Fg
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(Quantum wells)
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68.65.Hb
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(Quantum dots (patterned in quantum wells))
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81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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