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Electrical Characteristics of Copper Phthalocyanine Thin-Film Transistors with Polyamide-6/Polytetrafluoroethylene Gate Insulator |
| YU Shun-Yang1;XU Shi-Ai1;MA Dong-Ge2 |
| 1Key Laboratory of Chemicals Manufacture Engineering of Shandong Province, Yantai University, Yantai 2640052State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 |
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| Cite this article: |
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YU Shun-Yang, XU Shi-Ai, MA Dong-Ge 2007 Chin. Phys. Lett. 24 3513-3515 |
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Abstract Polyamide-6(PA 6)/polytetrafluoroethylene is studied as a potential gate dielectric for flexible organic thin film transistors. The same method used for the formation of organic semiconductor and gate dielectric films greatly simplifies the fabrication process of devices. The fabricated transistors show good electrical characteristics. Ambipolar behaviour is observed even when the device is operated in air.
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| Keywords:
73.61.Ph
81.15.Ef
85.30.Tv
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Received: 26 September 2007
Published: 03 December 2007
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