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Structural and Magnetic Properties of Codoped ZnO based Diluted Magnetic Semiconductors |
LI Bin-Bin1;SHEN Hong-Lie1;ZHANG Rong2;XIU Xiang-Qiang2;XIE Zhi3 |
| 1College of Material Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 2100162Department of Physics, Nanjing University, Nanjing 2100933National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029 |
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| Cite this article: |
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LI Bin-Bin, SHEN Hong-Lie, ZHANG Rong et al 2007 Chin. Phys. Lett. 24 3473-3476 |
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Abstract Zn1-xCoxO (x=0.01, 0.02, 0.05, 0.10 and 0.20) diluted magnetic semiconductors are prepared by the sol-gel method. The structural and magnetic properties of the samples are studied using x-ray diffraction (XRD), extended x-ray absorption fine structure (EXAFS) and superconducting quantum interference device (SQUID). The XRD patterns does not show any
signal of precipitates that are different from wurtzite type ZnO when Co content is lower than x=0.10. An EXAFS technique for the Co K-edge has been employed to probe the local structures around Co atoms doped in ZnO powders by fluorescence mode. The simulation results for the first shell EXAFS signals indicate that Zn sites can be substituted by Co atoms when Co content is lower than x=0.05. The SQUID results show that the samples (x<0.05) exhibit clear hysteresis loops at 300K, and magnetization versus temperature from 5K to 350K at H=100,Oe for the sample x=0.02 shows
that the samples have ferromagnetism above room temperature. A double-exchange mechanism is proposed to explain the ferromagnetic properties of the samples.
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| Keywords:
61.10.-i
61.10.Ht
85.25.Dq
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Received: 12 June 2007
Published: 03 December 2007
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[1] Dietl T, Ohno H, Mastsukura F, Cibert J and Ferrand D2000 Science 287 1019
[2] Sato K and Katayama-Yoshida H 2001 Jpn. J. Appl.Phys. 40 L334.
[3] Ueda K, Tabata H and Kawai A 2001 Appl. Phys. Lett. 79 988.
[4] Lee H J, Jeong S Y, Cho C R and Park C H 2002 Appl.Phys. Lett. 81 4020.
[5] Tuan A C, Bryan J D, Pakhomov A B, Shutthanandan V,Thevuthasan S, McCready D E and Gaspar D 2004 Phys. Rev. B 70 054424.
[6] Norton D P, Pearton S J, Hebard A F, Theodoropoulou N,Boatner L A and Wilson R G. 2003 Appl. Phys. Lett. 82239
[7] Cho Y M, Choo W K, Kim H, Kim D and Ihmet Y E 2002 Appl. Phys. Lett. 80 3358
[8] Fukumura T, Jin Z W, Kawasaki M, Shono T, Hasegawa T,Koshihara S and Koinumaet H 2001 Appl. Phys. Lett. 78958
[9] Jin Z W, Fukumura T, Kawasaki M, Ando K, Saito H,Sekiguchi T, Yoo Y Z, Murakami M, Matsumoto Y, Hasegawa T andKoinuma H 2001 Appl. Phys. Lett. 78 3824
[10] Ando K, Saito H, Jin Z, Fukumura T, Kawasaki M, MatsumotoY and Koinuma H 2001 J. Appl. Phys. 89 7284
[11] Park J H, Kim M G, Jang H M and Ryu S W 2004 Appl.Phys. Lett. 84 1338
[12] Kim J H, Kim H, Kim D, Ihm Y E and Chooet W K 2002 J. Appl. Phys. 92 6066
[13] Kunisu M, Oba F, Ikeno H, Tanaka I, and Yamamoto T 2005 Appl. Phys. Lett. 86 121902.
[14] Li B B, Xiu X Q, Zhang R, Tao Z K, Chen L, Xie Z L andZheng Y D 2006 Chin. Phys. Lett. 23 907
[15] Mokili B, Charreire Y, Cortes R and Lincot D 1996 Thin Solid Films 288 21
[16] Sato K and Yoshida H K 2002 Semicond. Sci. Technol. 17 367
[17] Zener C 1951 Phys. Rev. 82 403
[18] Sato K and Yoshida H K 2001 Physica B 308 904
[19] Daghofer M, Koller W, Evertz H G and Linder W 2004 J. Phys.: Condens. Matter 16 5469 |
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