| Original Articles |
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Strain Compensated AlInGaAs/InGaAs/InAs Triangular Quantum Wells for Lasing Wavelength beyond 2μm |
| GU Yi;ZHANG Yong-Gang;LIU Sheng |
| State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 |
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| Cite this article: |
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GU Yi, ZHANG Yong-Gang, LIU Sheng 2007 Chin. Phys. Lett. 24 3237-3240 |
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Abstract The subband energy and lasing wavelength of compressively strained triangular In0.53Ga0.47As/InAs quantum well are calculated and compared with the conventional rectangular ones with the same strain contents. The strain compensation using Al0.33In0.36Ga0.31As barrier is introduced. The
results show that lasing wavelength can be extended dramatically to beyond 2.8μm by changing the energy band from the conventional rectangular shape to a triangular one, the realization of such a structure using molecular beam epitaxy technology is also discussed.
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| Keywords:
73.21.Fg
42.60.By
42.55.Px
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Received: 07 May 2007
Published: 23 October 2007
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| PACS: |
73.21.Fg
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(Quantum wells)
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42.60.By
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(Design of specific laser systems)
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42.55.Px
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(Semiconductor lasers; laser diodes)
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