| Original Articles |
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Growth of Cu Films on Si(111)-7×7 Surfaces at Low Temperature: A Scanning Tunnelling Microscopy Study |
| SHEN Quan-Tong1;SUN Guo-Feng1;LI Wen-Juan1;DONG Guo-Cai1;HAN Tie-Zhu1;MA Da-Yan1;SUN Yu-Jie1,2, JIA Jin-Feng1,2;XUE Qi-Kun1,2 |
| 1Institute of Physics, Chinese Academy of Sciences, Beijing 1000802Department of Physics, Tsinghua University, Beijing 100084 |
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| Cite this article: |
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SHEN Quan-Tong, SUN Guo-Feng, LI Wen-Juan et al 2007 Chin. Phys. Lett. 24 3214-3217 |
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Abstract Morphologies of Cu(111) films on Si(111)-7×7 surfaces prepared at low
temperature are investigated by scanning tunnelling microscopy (STM) and
reflection high-energy electron diffraction (RHEED). At the initial growth stage, Cu films are flat due to the formation of silicide at the interface that decreases the mismatch between Cu films and the Si substrate. Different from the usual multilayer growth of Cu/Cu(111), on the silicide layer a layer-by-layer growth is observed. The two dimensional (2D) growth is explained by the enhanced high island density at low deposition temperature. Increasing deposition rate
produces films with different morphologies, which is the result of Ostwald ripening.
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| Keywords:
68.35.Md
68.37.Ef
68.55.Ac
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Received: 06 June 2007
Published: 23 October 2007
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| PACS: |
68.35.Md
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(Surface thermodynamics, surface energies)
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68.37.Ef
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(Scanning tunneling microscopy (including chemistry induced with STM))
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68.55.Ac
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