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A Physics-Based Compact Direct-Current and Alternating-Current Model for AlGaN/GaN High Electron Mobility Transistors |
| LI Miao;WANG Yan |
| Institute of Microelectronics, Tsinghua University, Beijing 100084 |
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| Cite this article: |
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LI Miao, WANG Yan 2007 Chin. Phys. Lett. 24 2998-3001 |
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Abstract A set of analytical models for the dc and small signal characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) are presented. A modified transferred-electron mobility model is adapted and a phenomenological low-field mobility model is developed. We calculate the channel charge considering the neutralization of donors and the contribution of free electrons in the AlGaN layer. The gate-to-source and gate-to-drain capacitances are obtained analytically, and the cut-off frequency is predicted. The models are implemented into the HSPICE simulator for the dc, ac and transient simulations and verified by experimental data for the first time. A high efficiency class-E GaN HEMT power amplifier is designed and simulated by the HSPICE to verify the applicability of our models.
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| Keywords:
85.30.De
73.40.Kp
73.61.Ey
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Received: 10 July 2007
Published: 20 September 2007
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| PACS: |
85.30.De
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(Semiconductor-device characterization, design, and modeling)
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73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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73.61.Ey
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(III-V semiconductors)
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