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Far-Field Distributions of Double-Heterostructure Diode Lasers: an Improved Non-Equiphase Model |
ZHAO Zhi-Guo 1,2;DUAN Kai-Liang2;LU Bai-Da2 |
| 1Department of Physics, Luoyang Normal College, Luoyang 4710222Institute of Laser Physics and Chemistry, Sichuan University, Chengdu 610064 |
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ZHAO Zhi-Guo, DUAN Kai-Liang, LU Bai-Da 2007 Chin. Phys. Lett. 24 2836-2838 |
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Abstract A non-equiphase Gaussian model is proposed to simulate the far-field distributions of double-heterostructure diode lasers, which is physically reasonable because the phase along the junction of diode lasers could not be equal. A comparison of the numerically calculated intensity profiles in using the equal phase and non-equiphase models with the experimentally measured intensity profiles given by Nemoto shows that in the x direction perpendicular to the junction plane, the non-equiphase Gaussian model is as good as the equal phase Gaussian model. Specifically, in the y direction parallel to the junction plane and the 45°direction with respect to the x axis in the xoy plane, the numerical results by using the non-equiphase model are in good agreement with the experimental data, as the propagation distance is larger than a certain value.
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| Keywords:
42.55.-f
41.85.Gy
42.55.Px
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Received: 23 May 2007
Published: 20 September 2007
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