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Fabrication of Nanoimprint Stamp Using Interference Lithography |
| CHEN Xian-Zhong;LI Hai-Ying |
| State Key Laboratory of Optical Technologies for Microfabrication, Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu 610209 |
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| Cite this article: |
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CHEN Xian-Zhong, LI Hai-Ying 2007 Chin. Phys. Lett. 24 2830-2832 |
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Abstract Interference lithography is used to fabricate a nanoimprint stamp, which is a key step for nanoimprint lithography. A layer of chromium in thickness of about 20nm is deposited on the newly cleaned fused silica substrate by thermal evaporation, and a layer of positive resist in thickness of 150nm is spun on the chromium layer. Some patterns, including lines, holes and pillars, are observed on the photoresist film by exposing the resist to interference patterns and they are then transferred to the chromium layer by wet etching. Fused silica stamps are fabricated by reactive ion etching with CHF3/O2 as
etchants using the chromium layer as etch mask. An atomic force microscope is used to analyse the pattern transfer in each step. The results show that regular hole patterns of fused silica, with average full width 143nm at half maximum (FWHM), average hole depth of 76nm and spacing of 450nm, have been fabricated. The exposure method is fast, inexpensive and applicable for fabrication of nanoimprint stamps with large areas.
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| Keywords:
42.40.-i
42.40.Eq
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Received: 15 June 2007
Published: 20 September 2007
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| PACS: |
42.40.-i
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(Holography)
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42.40.Eq
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(Holographic optical elements; holographic gratings)
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[1] Moon J H, Ford J and Yang S 2006 Polym. Adv. Technol.17 83
[2] Rijn C J M V 2006 J. Microlith. Microfab. Microsyst. 5 011012
[3] Pang Y K, Lee J C W and Lee H F 2005 Opt. Exp. 13 7615
[4] Zhu S L, Luo X G, Du C L, Li F, Yin S Y, Deng Q L and Fu Y Q 2007J. Appl. Phys. 101 064701
[5] Kelly K L, Coronado E, Zhao L L and Schatz G C 2003 J. Phys.Chem. B 107 668
[6] Link S and El-Sayed M A 2003 Ann. Rev. Phys. Chem. 54331
[7] Ferandez A, Bedrossian P J, Baker S L, Vernon S P and Kania D R1996 IEEE Trans. Magnet. 32 4472
[8] Wang C T, Du C L and Luo X G 2006 Phys. Rev. B 74 245403
[9] Gao H T, Shi H F, Wang C T, Du C L, Luo X G, Deng Q L, Lv Y G, LinX D and Yao H M 2005 Opt. Exp. 13 10795
[10] Gourgon C, Perret C, Tallal J, Lazzarino F, Landis S, Joubert Oand Pelzer R 2005 J. Phys. D: Appl. Phys. 38 70
[11] Chou S Y, Krauss P R and Renstrom P J 1995 Appl. Phys. Lett.67 3114
[12] Sloak H H 2006 J. Phys. D: Appl. Phys. 39 R171 |
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