Flip-Chip GaN-Based Light-Emitting Diodes with Mesh-Contact Electrodes

Chin. Phys. Lett.

2007, Vol. 24

Issue (1): 268-270 DOI:

Original Articles

Flip-Chip GaN-Based Light-Emitting Diodes with Mesh-Contact Electrodes

ZHU Yan-Xu;XU Chen;HAN Jun;SHEN Guang-Di

Beijing Optoelectronic Technology Laboratory, Institute of Electronic Engineering and Information, Beijing University of Technology, Beijing 100022

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ZHU Yan-Xu, XU Chen, HAN Jun et al 2007 Chin. Phys. Lett. 24 268-270

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Abstract GaN-based light-emitting diodes (LEDs) with mesh-contact electrodes have been developed. The p-type ohmic contact layer is composed of oxidized Ni/Au mesh and NiO overlay (20Å). An Ag (3000Å) omni-directional reflector covers the p-type contact. The n-type contact is a Ti/Al planar film with a 10-μm-width Ti/Al stripe. The Ti/Al stripe surrounds the centre of LED mesa. With a 20-mA current injection, the light output power of GaN-based LEDs with mesh-contact electrodes is 23% higher than that of the conventional LEDs.

Keywords: 85.60.Jb 77.88.Bw 73.61.Ey

Published: 01 January 2007

PACS:	85.60.Jb	(Light-emitting devices)
	77.88.Bw
	73.61.Ey	(III-V semiconductors)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2007/V24/I1/0268

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	ZHU Yan-Xu
	XU Chen
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	SHEN Guang-Di

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