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Chalcogenide Random Access Memory Cell with Structure of W Sub-Microtube Heater Electrode |
LIU Bo1;FENG Gao-Ming1;WU Liang-Cai1;SONG Zhi-Tang1;LIU Qi-Bin1;FENG Song-Lin1;CHEN Bomy2 |
1Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
2Silicon Storage Technology, Inc. 1171 Sonora Court, Sunnyvale, CA 94086 USA |
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Cite this article: |
LIU Bo, FENG Gao-Ming, WU Liang-Cai et al 2007 Chin. Phys. Lett. 24 262-264 |
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Abstract In order to reduce the reset current of chalcogenide random access memory, a W sub-microtube heater electrode with outer/inner diameter of 260/100nm, which was fabricated with standard 0.18-μm echnology, is proposed for the first time to achieve a reset current of about 0.5mA. The reasons may be that sub-microtube increases the number of electrode edge and thermal efficiency is improved greatly because the thermal density on the edge of sub-microtube electrode is generally the highest.
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Keywords:
85.35.-p
85.30.De
73.90.+f
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Published: 01 January 2007
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PACS: |
85.35.-p
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(Nanoelectronic devices)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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73.90.+f
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(Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)
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