Chin. Phys. Lett.  2007, Vol. 24 Issue (1): 262-264    DOI:
Original Articles |
Chalcogenide Random Access Memory Cell with Structure of W Sub-Microtube Heater Electrode
LIU Bo1;FENG Gao-Ming1;WU Liang-Cai1;SONG Zhi-Tang1;LIU Qi-Bin1;FENG Song-Lin1;CHEN Bomy2
1Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 2Silicon Storage Technology, Inc. 1171 Sonora Court, Sunnyvale, CA 94086 USA
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LIU Bo, FENG Gao-Ming, WU Liang-Cai et al  2007 Chin. Phys. Lett. 24 262-264
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Abstract In order to reduce the reset current of chalcogenide random access memory, a W sub-microtube heater electrode with outer/inner diameter of 260/100nm, which was fabricated with standard 0.18-μm echnology, is proposed for the first time to achieve a reset current of about 0.5mA. The reasons may be that sub-microtube increases the number of electrode edge and thermal efficiency is improved greatly because the thermal density on the edge of sub-microtube electrode is generally the highest.
Keywords: 85.35.-p      85.30.De      73.90.+f     
Published: 01 January 2007
PACS:  85.35.-p (Nanoelectronic devices)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
  73.90.+f (Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2007/V24/I1/0262
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LIU Bo
FENG Gao-Ming
WU Liang-Cai
SONG Zhi-Tang
LIU Qi-Bin
FENG Song-Lin
CHEN Bomy
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