| Original Articles |
|
|
|
|
Influence of GaAsP Insertion Layers on Performance of InGaAsP/InGaP/AlGaAs Quantum-Well Laser |
| CAO Yu-Lian1;LIAN Peng2;MA Wen-Quan1;WANG Qing1;WU Xu-Ming1;HE Guo- Rong1;LI Hui1;WANG Xiao-Dong1;SONG Guo-Feng1;CHEN Liang-Hui1 |
| 1Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2Department of Electronic Engineering, Beijing University of Technology, Beijing 100022 |
|
| Cite this article: |
|
CAO Yu-Lian, LIAN Peng, MA Wen-Quan et al 2006 Chin. Phys. Lett. 23 2586-2586 |
|
|
|
Abstract We report on the use of very thin GaAsP insertion layers to improve the performance of an GaAsP/InGaP/AlGaAs single quantum-well laser structure grown by metal organic chemical vapour deposition. Compared to the non-insertion structure, the full width at half maximum of photoluminescence spectrum of the insertion structure measured at room temperature is decreased from 47 to 38nm indicating sharper interfaces. X-ray diffraction shows that the GaAsP insertion layers between AlGaAs and InGaP compensates for the compressive strain to improve the total interface. The laser performance of the insertion structure is significantly improved as compared with the counterpart without the insertion layers. The threshold current is decreased from 560 to 450mA while the slope efficiency is increased from 0.61 to 0.7W/A and the output power is increased from 370 to 940mW. The slope efficiency improved is very high for the devices without coated facets. The improved laser performance is attributed to the suppression of indium carry-over due to the use of the GaAsP insertion layers.
|
| Keywords:
78.67.De
81.15.Gh
85.60.Jb
|
|
|
Published: 01 September 2006
|
|
| PACS: |
78.67.De
|
(Quantum wells)
|
| |
81.15.Gh
|
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
|
| |
85.60.Jb
|
(Light-emitting devices)
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
