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Enhancement of Photoluminescence Intensity of GaInNAs/GaAs Quantum Wells by Two-Step Rapid Thermal Annealing |
| ZHAO Huan;XU Ying-Qiang;NI Hai-Qiao;HAN Qin;WU Rong-Han;NIU Zhi-Chuan |
| State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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| Cite this article: |
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ZHAO Huan, XU Ying-Qiang, NI Hai-Qiao et al 2006 Chin. Phys. Lett. 23 2579-2582 |
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Abstract We investigate the effect of rapid thermal annealing on InGaNAs/GaAs quantum wells. At optimized annealing temperatures and times, the greatest enhancement of the photoluminescence intensity is obtained by a special two-step annealing process. To identify the mechanism affecting the material quality during the rapid thermal annealing, differential temperature analysis is applied, and temperature- and power-dependent photoluminescence is carried out on the samples annealed under different conditions. Our experiment reveals that some composition redistribution or other related ordering processes may occur in the quantum-well layer during annealing. Annealing at a lower temperature for a long time primarily can remove defects and dislocations while annealing at a higher temperature for a short time primarily homogenizes the composition in the quantum wells.
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| Keywords:
78.67.De
78.55.Cr
61.72.Cc
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Published: 01 September 2006
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