| Original Articles |
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Microstructure Study on Heterostructures of AlInGaN/GaN/Al2O3 by Using Rutherford ackscattering/Channelling and XRD |
| WANG Huan1;YAO Shu-De1;PAN Yao-Bo2;YU Tong-Jun2;ZHANG Guo-Yi2 |
| 1Department of Technical Physics, School of Physics, Peking University, Beijing 100871
2State Key Laboratory of Artificial Microstructure and Microscopic Physics, School of Physics, Peking University, Beijing 100871 |
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| Cite this article: |
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WANG Huan, YAO Shu-De, PAN Yao-Bo et al 2006 Chin. Phys. Lett. 23 2510-2512 |
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Abstract A quaternary AlInGaN layer is grown by metal--organic chemical vapour deposition on a sapphire (0001) substrate with a thick (>1μm) GaN intermediate layer. The compositions of In and Al are determined by Rutherford backscattering (RBS). The low ratio between the channelling yield and random yield according to the spectra of RBS/C (Xmin=1.44%) means that the crystal quality of the AlInGaN film is perfect. The perpendicular and the parallel elastic strain of the AlInGaN layer, e⊥=-0.15% and e//=0.16%, respectively, are derived using a combination of XRD and RBS/channelling.
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| Keywords:
61.10.Nz
82.80.Yc
81.05.Ea
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Published: 01 September 2006
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| PACS: |
61.10.Nz
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82.80.Yc
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(Rutherford backscattering (RBS), and other methods ofchemical analysis)
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81.05.Ea
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(III-V semiconductors)
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