| Original Articles |
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Growth and Annealing Study of Mg-Doped AlGaN and GaN/AlGaN Superlattices |
| WANG Bao-Zhu;WANG Xiao-Liang;HU Guo-Xin;RAN Jun-Xue;WANG Xin-Hua;GUO Lun-Chun;XIAO Hong-Ling;LI Jian-Ping;ZENG Yi-Ping;LI Jin-Min;WANG Zhan-Guo |
| Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| Cite this article: |
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WANG Bao-Zhu, WANG Xiao-Liang, HU Guo-Xin et al 2006 Chin. Phys. Lett. 23 2187-2189 |
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Abstract Mg-doped AlGaN and GaN/AlGaN superlattices are grown by metalorganic chemical vapour deposition (MOCVD). Rapid thermal annealing (RTA) treatments are carried out on the samples. Hall and high resolution x-ray diffraction measurements are used to characterize the electrical and structural prosperities of the as-grown and annealed samples, respectively. The results of hall measurements show that after annealing, the Mg-doped AlGaN sample can not obtain the distinct hole concentration and can acquire a resistivity of 1.4×103Ωcm. However, with the same annealing treatment, the GaN/AlGaN superlattice sample has a hole concentration of 1.7×1017cm-3 and a resistivity of 5.6Ωcm. The piezoelectric field in the GaN/AlGaN superlattices improves the activation efficiency of Mg acceptors, which leads to higher hole concentration and lower p-type resistivity.
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61.72.Vv
81.15.Gh
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Published: 01 August 2006
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| PACS: |
61.72.Vv
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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