Chin. Phys. Lett.  2006, Vol. 23 Issue (8): 2187-2189    DOI:
Original Articles |
Growth and Annealing Study of Mg-Doped AlGaN and GaN/AlGaN Superlattices
WANG Bao-Zhu;WANG Xiao-Liang;HU Guo-Xin;RAN Jun-Xue;WANG Xin-Hua;GUO Lun-Chun;XIAO Hong-Ling;LI Jian-Ping;ZENG Yi-Ping;LI Jin-Min;WANG Zhan-Guo
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
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WANG Bao-Zhu, WANG Xiao-Liang, HU Guo-Xin et al  2006 Chin. Phys. Lett. 23 2187-2189
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Abstract Mg-doped AlGaN and GaN/AlGaN superlattices are grown by metalorganic chemical vapour deposition (MOCVD). Rapid thermal annealing (RTA) treatments are carried out on the samples. Hall and high resolution x-ray diffraction measurements are used to characterize the electrical and structural prosperities of the as-grown and annealed samples, respectively. The results of hall measurements show that after annealing, the Mg-doped AlGaN sample can not obtain the distinct hole concentration and can acquire a resistivity of 1.4×103Ωcm. However, with the same annealing treatment, the GaN/AlGaN superlattice sample has a hole concentration of 1.7×1017cm-3 and a resistivity of 5.6Ωcm. The piezoelectric field in the GaN/AlGaN superlattices improves the activation efficiency of Mg acceptors, which leads to higher hole concentration and lower p-type resistivity.
Keywords: 61.72.Vv      81.15.Gh     
Published: 01 August 2006
PACS:  61.72.Vv  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2006/V23/I8/02187
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WANG Bao-Zhu
WANG Xiao-Liang
HU Guo-Xin
RAN Jun-Xue
WANG Xin-Hua
GUO Lun-Chun
XIAO Hong-Ling
LI Jian-Ping
ZENG Yi-Ping
LI Jin-Min
WANG Zhan-Guo
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