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Near Infrared Photoluminescence from Yb,Al Co-implanted SiO2 Films on Silicon |
ZHANG Jian-Guo; WANG Xiao-Xin; CHENG Bu-Wen;YU Jin-Zhong; WANG Qi-Ming |
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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Cite this article: |
ZHANG Jian-Guo, WANG Xiao-Xin, CHENG Bu-Wen et al 2006 Chin. Phys. Lett. 23 2183-2186 |
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Abstract Intense room-temperature near infrared (NIR) photoluminescence (980nm and 1032nm) is observed from Yb,Al co-implanted SiO2 films on silicon. The optical transitions occur between the 2F5/2 and 2 F7/2 levels of Yb3+ in SiO2. The additional Al-implantation into SiO2 films can effectively improve the concentration quenching effect of Yb3+ in SiO2. Photoluminescence excitation spectroscopy shows that the NIR photoluminescence is due to the non-radiative energy transfer from Al-implantation-induced non-bridging oxygen hole defects in SiO2 to Yb3+ in the Yb-related luminescent complexes. It is believed that the defect-mediated luminescence of rare-earth ions in SiO2 is very effective.
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Keywords:
61.72.Tt
78.55.2m
76.30.Kg
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Published: 01 August 2006
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