Compact, Low Threshold Nd<sup>3+</sup>:YVO<suB>4</suB> Self-Raman Laser at 1178nm

Chin. Phys. Lett.

2006, Vol. 23

Issue (8): 2095-2097 DOI:

Original Articles

Compact, Low Threshold Nd³⁺:YVO₄ Self-Raman Laser at 1178nm

WANG Bao-Shan^1,2;TAN Hui-Ming¹;GAO Lan-Lan^1,2;PENG Ji-Ying^1,2;MIAO Jie-Guang^1,2

¹Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 ²Graduate School of the Chinese Academy of Sciences, Beijing 100080

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WANG Bao-Shan, TAN Hui-Ming, GAO Lan-Lan et al 2006 Chin. Phys. Lett. 23 2095-2097

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Abstract A compact low-threshold Raman laser at 1178nm is experimentally realized by using a diode-end-pumped actively Q-switched Nd³⁺:YVO₄ self-Raman laser. The threshold is 370mW at a pulse repetition frequency of 5kHz. The maximum Raman laser output is 182mW with the pulse duration smaller than 20ns at a pulse repetition frequency of 30kHz with 1.8W incident power. The optical efficiency from the incident power to the Raman laser is 10% and the slope efficiency is 13.5%.

Keywords: 42.55.Xi 42.55.Ye 42.60.Gd

Published: 01 August 2006

PACS:	42.55.Xi	(Diode-pumped lasers)
	42.55.Ye	(Raman lasers)
	42.60.Gd	(Q-switching)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2006/V23/I8/02095

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	WANG Bao-Shan
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	MIAO Jie-Guang

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