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Characteristics of Nd:GdVO4 Laser with Different Nd-Doping Concentrations |
| ZHANG Ling1;ZHANG Chun-Yu1;WEI Zhi-Yi1;ZHANG Zhi-Guo1;Stephan Strohmaier2;Hans J. Eichler2 |
| 1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
2Optical Institute, Technical University Berlin, Strasse de 17 Juni 135, D-10623 Berlin, Germany |
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| Cite this article: |
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ZHANG Ling, ZHANG Chun-Yu, WEI Zhi-Yi et al 2006 Chin. Phys. Lett. 23 2088-2091 |
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Abstract We report the properties of a compact diode-pumped continuous-wave Nd:GdVO4 laser with a linear cavity and different Nd-doped laser crystals. In a 0.2at.% Nd-doped Nd:GdVO4 laser, 1.54W output
laser power is achieved at 912nm wavelength with a slope efficiency of 24.8% at an absorbed pump power of 9.4W. With 0.3at.% Nd-doping concentration, we can obtain the either single-wavelength emission at 1064nm or 912nm or the dual-wavelength emission at 1064nm and 912nm by controlling the incident pump power. From an incident pump power of 11.6W, the 1064nm emission between 4F3/2 and 4I11/2 is suppressed completely by the 912nm emission between 4F3/2 and 4I9/2. We obtain 670mW output of the 912nm single-wavelength laser emission with a slope efficiency of 5.5% by taking an incident pump power of 18.4W. Using a Nd:GdVO4 laser with 0.4at.% Nd-doping concentration, we obtain either the single-wavelength emission at 1064nm or the dual-wavelength emission at both 1064nm and 912nm by increasing the incident pump power. We observe a strong competition process in the dual-wavelength laser.
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| Keywords:
42.55.Rz
42.55.Xi
42.70.Hj
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Published: 01 August 2006
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| PACS: |
42.55.Rz
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(Doped-insulator lasers and other solid state lasers)
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42.55.Xi
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(Diode-pumped lasers)
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42.70.Hj
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(Laser materials)
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