Characterization of Al<suB>2</suB>O<suB>3</suB> Thin Films on GaAs Substrate Grown by Atomic Layer Deposition

Chin. Phys. Lett.

2006, Vol. 23

Issue (7): 1929-1931 DOI:

Original Articles

Characterization of Al₂O₃ Thin Films on GaAs Substrate Grown by Atomic Layer Deposition

LU Hong-Liang¹;LI Yan-Bo²;XU Min¹;DING Shi-Jin¹;SUN Liang¹;ZHANG Wei¹;WANG Li-Kang¹

¹State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433 ²College of Electronic and Information Engineering, Hebei University, Baoding 071002

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LU Hong-Liang, LI Yan-Bo, XU Min et al 2006 Chin. Phys. Lett. 23 1929-1931

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Abstract Al₂O₃ thin films are grown by atomic layer deposition on GaAs substrates at 300°C. The structural properties of the Al₂O₃ thin film and the Al₂O₃/GaAs interface are characterized using x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and x-ray photoelectron spectroscopy (XPS). The XRD results show that the as-deposited Al₂O₃ film is amorphous. For 30 atomic layer deposition growth cycles, the thicknesses of the Al₂O₃ thin film and the interface layer from the HRTEM are 3.3nm and 0.5nm, respectively. XPS analyses reveal that the Al₂O₃/GaAs interface is almost free from As₂O₃.

Keywords: 81.15.Gh 79.60.-i 33.60.Fy

Published: 01 July 2006

PACS:	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	79.60.-i	(Photoemission and photoelectron spectra)
	33.60.Fy

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2006/V23/I7/01929

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	LU Hong-Liang
	LI Yan-Bo
	XU Min
	DING Shi-Jin
	SUN Liang
	ZHANG Wei
	WANG Li-Kang

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