Chin. Phys. Lett.  2006, Vol. 23 Issue (7): 1902-1902    DOI:
Original Articles |
Thermal Stability of Strained AlGaN/GaN Heterostructures
ZHANG Min;XIAO Hong-Di;LIN Zhao-Jun
School of Physics and Microelectronics, Shandong University, Jinan 250100
Cite this article:   
ZHANG Min, XIAO Hong-Di, LIN Zhao-Jun 2006 Chin. Phys. Lett. 23 1902-1902
Download: PDF(223KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract The thermal stability of strained AlGaN/GaN heterostructures is characterized by comparing unannealed and 700°C 30-min annealed Ni Schottky contacts prepared on strained AlGaN/GaN heterostructures. Using photoemission, capacitance--voltage measurements, and the self-consistent solution of Schrodinger's and Poisson's equations, it is found that after 700°C 30-min thermal annealing the Schottky barrier height of Ni Schottky contacts on strained AlGaN/GaN heterostructures is increased, and the sheet density of polarization charges and the sheet density of two-dimensional electron gas (2DEG) electrons for the strained AlGaN/GaN heterostructures are reduced. These results are closely related to the performance of AlGaN/GaN HFETs at high temperature.

Keywords: 73.40.Kp      85.30.-z      72.80.Ey     
Published: 01 July 2006
PACS:  73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
  85.30.-z (Semiconductor devices)  
  72.80.Ey (III-V and II-VI semiconductors)  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2006/V23/I7/01902
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
ZHANG Min
XIAO Hong-Di
LIN Zhao-Jun
Related articles from Frontiers Journals
[1] LIU Shao-Qing, HAN Qin, ZHU Bin, YANG Xiao-Hong, NI Hai-Qiao, HE Ji-Fang, WANG Win, NIU Zhi-Chuan. Tunable Metamorphic Resonant Cavity Enhanced InGaAs Photodetectors Grown on GaAs Substrates[J]. Chin. Phys. Lett., 2012, 29(3): 1902-1902
[2] CAO Xiao-Long, WANG Yu-Ye, XU De-Gang, **, ZHONG Kai, LI Jing-Hui, LI Zhong-Yang, ZHU Neng-Nian, YAO Jian-Quan,. THz-Wave Difference Frequency Generation by Phase-Matching in GaAs/AlxGa1−xAs Asymmetric Quantum Well[J]. Chin. Phys. Lett., 2012, 29(1): 1902-1902
[3] LIU Sheng-Hou, CAI Yong**, GONG Ru-Min, WANG Jin-Yan, ZENG Chun-Hong, SHI Wen-Hua, FENG Zhi-Hong, WANG Jing-Jing, YIN Jia-Yun, Cheng P. Wen, QIN Hua, ZHANG Bao-Shun . Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using a Nano-Channel Array Structure[J]. Chin. Phys. Lett., 2011, 28(7): 1902-1902
[4] CHENG Zai-Jun, SAN Hai-Sheng**, CHEN Xu-Yuan, **, LIU Bo, FENG Zhi-Hong . Demonstration of a High Open-Circuit Voltage GaN Betavoltaic Microbattery[J]. Chin. Phys. Lett., 2011, 28(7): 1902-1902
[5] XU Xiao-Bo**, ZHANG He-Ming . An Analytical Avalanche Multiplication Model for Partially Depleted Silicon-on-Insulator SiGe Heterojunction Bipolar Transistors[J]. Chin. Phys. Lett., 2011, 28(7): 1902-1902
[6] LIU Zhang-Li, **, HU Zhi-Yuan, ZHANG Zheng-Xuan, SHAO Hua, NING Bing-Xu, BI Da-Wei, CHEN Ming, ZOU Shi-Chang . Enhanced Total Ionizing Dose Susceptibility in Narrow Channel Devices[J]. Chin. Phys. Lett., 2011, 28(7): 1902-1902
[7] Sur S., Ö, ztürk Z., Ö, zta&scedil, M.**, Bedir M., Ö, zdemir Y. . Effect of Water Concentration on the Characterization of Sprayed Cd0.5Zn0.5S Films[J]. Chin. Phys. Lett., 2011, 28(6): 1902-1902
[8] CHEN Yi-Xin**, SHEN Guang-Di, ZHU Yan-Xu, GUO Wei-Ling, LI Jian-Jun . Efficiency-enhanced AlGaInP Light-Emitting Diodes with Thin Window Layers and Coupled Distributed Bragg Reflectors[J]. Chin. Phys. Lett., 2011, 28(6): 1902-1902
[9] WANG Yong, **, YU Nai-Sen, LI Ming, LAU Kei-May . Improved AlGaN/GaN HEMTs Grown on Si Substrates Using Stacked AlGaN/AlN Interlayer by MOCVD[J]. Chin. Phys. Lett., 2011, 28(5): 1902-1902
[10] HU Sheng-Dong, **, ZHANG Ling, LUO Xiao-Rong, ZHANG Bo, LI Zhao-Ji, WU Li-Juan . Design of a 1200-V Thin-Silicon-Layer p-Channel SOI LDMOS Device[J]. Chin. Phys. Lett., 2011, 28(12): 1902-1902
[11] XIA Xiao-Chuan, WANG Hui, ZHAO Yang, WANG Jin, ZHAO Jian-Ze, SHI Zhi-Feng, LI Xiang-Ping, LIANG Hong-Wei, ZHANG Bao-Lin, DU Guo-Tong, ** . Ultraviolet-Visible Electroluminescence of a p-ZnO:As/n-Si Device Formed by the GaAs Interlayer Doping Method[J]. Chin. Phys. Lett., 2011, 28(10): 1902-1902
[12] ZHOU Bin, WANG Jin-Yan**, MENG Di, LIN Shu-Xun, FANG Min, DONG Zhi-Hua, YU Min, HAO Yi-Long, Cheng P. WEN . A High Breakdown Voltage AlGaN/GaN MOSHEMT Using Thermal Oxidized Al-Ti as the Gate Insulator[J]. Chin. Phys. Lett., 2011, 28(10): 1902-1902
[13] ZHANG Guang-Chen, FENG Shi-Wei**, HU Pei-Feng, ZHAO Yan, GUO Chun-Sheng, XU Yang, CHEN Tang-Sheng, JIANG Yi-Jian . Channel Temperature Measurement of AlGaN/GaN HEMTs by Forward Schottky Characteristics2010-[J]. Chin. Phys. Lett., 2011, 28(1): 1902-1902
[14] CAO Dong-Sheng, LU Hai, **, CHEN Dun-Jun, HAN Ping, ZHANG Rong, ZHENG You-Dou . A 1100+V AlGaN/GaN-Based Planar Schottky Barrier Diode without Edge Termination[J]. Chin. Phys. Lett., 2011, 28(1): 1902-1902
[15] WAN Lang-Hui, YU Yun-Jin, WANG Bin. Spin Filter of Graphene Nanoribbon Based Structure[J]. Chin. Phys. Lett., 2010, 27(8): 1902-1902
Viewed
Full text


Abstract