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Influence of Mn-Doped Content on Ferromagnetism of Ga1-xMnxN Film Grown by LP-MOVPE |
ZHANG Bin1;YAO Shu-De1;WANG Kun1;DING Zhi-Bo1;CHEN Zhi-Tao2;SU Yue-Yong2;ZHANG Guo-Yi2;MA Hong-Ji1;NIE Rui1;ZHANG Ya-Wei1 |
1Department of Technical Physics, School of Physics, Peking University, Beijing 100871
2Department of Physics, School of Physics, Peking University, Beijing 100871 |
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Cite this article: |
ZHANG Bin, YAO Shu-De, WANG Kun et al 2006 Chin. Phys. Lett. 23 1585-1587 |
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Abstract The diluted magnetic semiconductor Ga1-xMnxN was achieved by low-pressure metal organic vapour-phase epitaxy (LP-MOVPE). Proton-induced x-ray emission was employed non-destructively, quickly and accurately to determine the Mn-doped content. The magnetic property was measured by a superconducting-quantum-interference-device (SQID) magnetometer. Apparent ferromagnetic hysteresis loops measured at or above room temperature are presented. No ferromagnetic secondary phases were detected by high-resolution x-ray diffraction. The experimental results show that the ferromagnetic signal firstly decreases and then increases with the increasing Mn-doped content from 0.23% to 4.69% and it is the weakest when Mn content is 0.51%. The annealing treatment could make the ferromagnetic property stronger.
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Keywords:
75.50.Pp
75.70.Ak
32.30.Rj
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Published: 01 June 2006
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PACS: |
75.50.Pp
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(Magnetic semiconductors)
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75.70.Ak
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(Magnetic properties of monolayers and thin films)
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32.30.Rj
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(X-ray spectra)
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