| Original Articles |
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Influence of Polarization-Induced Electric Field on Subband Structure in AlxGa1-xN/GaN Double Quantum Wells |
| LEI Shuang-Ying;SHEN Bo;ZHANG Guo-Yi |
| School of Physics and State Key Laboratory for Mesoscopic Physics, Research Centre for Wide Gap Semiconductor, Peking University, Beijing 100871 |
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| Cite this article: |
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LEI Shuang-Ying, SHEN Bo, ZHANG Guo-Yi 2006 Chin. Phys. Lett. 23 1574-1577 |
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Abstract The influence of the polarization-induced electric field and other parameters on the subband structure in AlxGa1-xN /GaN coupled double quantum wells (DQWs) has been studied by solving the Schrödinger and Poisson equations self-consistently. It is found that the polarization effect leads to an asymmetric potential profile of AlxGa1-xN/GaN DQWs although the two wells have the same width and depth. The polarization effect also leads to a very large Stark shift between the odd and the even order subband levels that can reach 0.54eV. Due to the polarization-induced Stark shift, the wavelength of the intersubband transition between the first odd order and the second even order subband levels becomes smaller, which is useful for realization of optoelectronic devices operating within the telecommunication window region.
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| Keywords:
73.21.Fg
72.80.Ey
03.65.Ge
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Published: 01 June 2006
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| PACS: |
73.21.Fg
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(Quantum wells)
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72.80.Ey
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(III-V and II-VI semiconductors)
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03.65.Ge
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(Solutions of wave equations: bound states)
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