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Integrated a-Si:B Microbolometer Arrays Based on Improved Porous Silicon Micromachining Techniques |
| YUE Rui-Feng;DONG Liang;LIU Li-Tian |
| Institute of Microelectronics, Tsinghua University, Beijing 100084 |
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| Cite this article: |
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YUE Rui-Feng, DONG Liang, LIU Li-Tian 2006 Chin. Phys. Lett. 23 1331-1334 |
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Abstract A monolithic uncooled 8×8 microbolometer array with boron-doped a-Si (a-Si:B) thermistors as active elements is presented. The a-Si:B film was deposited by plasma enhanced chemical vapour deposition. To decrease the thermal conductance of the microbolometer, a-Si:B thermistor was formed on a four-leg suspended microbridge. The improved porous silicon micromachining techniques described here enable the integration of the sensor array with the metal--oxide--semiconductor readout circuitry. The sacrificial material of porous silicon is prepared in the first step. It is then well protected all the time during the fabrication of metal--oxide--semiconductor field effect transistors and microbolometers before being released. Measurements and calculations show that the uncorrected uniformity of the 8×8 microbolometer array is about 4.5%, and the detectivity of 2.17×108cm Hz1/2W-1 is achieved at a chopping frequency of 30Hz and a bias voltage of 5V with a thermal response time of 12.4ms.
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| Keywords:
85.60.Gz
07.10.Cm
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Published: 01 May 2006
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| PACS: |
85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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07.10.Cm
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(Micromechanical devices and systems)
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