Step-by-Step Laser Crystallization of Amorphous Si:H/SiN<suB>x</suB>:H Multilayer for Active Layer in Microcavities

Chin. Phys. Lett.

2006, Vol. 23

Issue (5): 1302-1305 DOI:

Original Articles

Step-by-Step Laser Crystallization of Amorphous Si:H/SiN_x:H Multilayer for Active Layer in Microcavities

QIAN Bo;CHEN San;CEN Zhan-Hong;CHEN Kun-Ji;LIU Yan-Song;XU Jun;MA Zhong-Yuan;LI Wei;HUANG Xin-Fan

National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093

Cite this article:

QIAN Bo, CHEN San, CEN Zhan-Hong et al 2006 Chin. Phys. Lett. 23 1302-1305

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Abstract We report the crystallization and photoluminescence (PL) properties of amorphous Si:H/SiN_x:H multilayer (ML) films treated by step-by-step laser annealing. The results of Raman measurements show that the nanocrystalline Si (nc-Si) grains are formed in the a-Si:H layers under the constrained growth mechanism. The blue shift of PL peak with grain size is observed and can be attributed to the quantum confinement effect. For comparison, we also report the crystallization and PL of a-Si:H/SiN_x:H ML samples by normal one-step treatment. This method of step-by-step laser treatment will be a candidate to make nc-Si quantum dots in amorphous Si:H/SiN_x:H ML as an active layer in microcavities.

Keywords: 78.55.-m 78.67.Hc 79.20.Ds 42.55.Sa

Published: 01 May 2006

PACS:	78.55.-m	(Photoluminescence, properties and materials)
	78.67.Hc	(Quantum dots)
	79.20.Ds	(Laser-beam impact phenomena)
	42.55.Sa	(Microcavity and microdisk lasers)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2006/V23/I5/01302

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	QIAN Bo
	CHEN San
	CEN Zhan-Hong
	CHEN Kun-Ji
	LIU Yan-Song
	XU Jun
	MA Zhong-Yuan
	LI Wei
	HUANG Xin-Fan

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