Room-Temperature Ferromagnetism of Ga<suB>1-x</suB>Mn<suB>x</suB>N Grown by Low-Pressure Metalorganic Chemical Vapour Deposition

Chin. Phys. Lett.

2006, Vol. 23

Issue (5): 1286-1288 DOI:

Original Articles

Room-Temperature Ferromagnetism of Ga_1-xMn_xN Grown by Low-Pressure Metalorganic Chemical Vapour Deposition

CHEN Zhi-Tao^1,2,3;SU Yue-Yong^1,2,3;YANG Zhi-Jian^1,2,3;ZHANG Yan^1,2,3;ZHANG Bin^1,2,3;GUO Li-Ping⁴;XU Ke^1,2,3;PAN Yao-Bao^1,2,3;ZHANG Han^1,2;ZHANG Guo-Yi^1,2,3

¹School of Physics, Materials Physics Laboratory, Peking University, Beijing 100871 ²Research Center for Wide-Band Semiconductors, Peking University, Beijing 100871 ³State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing 100871 ⁴Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049

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CHEN Zhi-Tao, SU Yue-Yong, YANG Zhi-Jian et al 2006 Chin. Phys. Lett. 23 1286-1288

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Abstract Epitaxial films of Ga_1-xMn_xN have been grown on c-sapphire substrates by low-pressure metal-organic vapour phase epitaxy. The samples show ferromagnetic behaviour up to a temperature of T=380K with hysteresis curves showing a coercivity of 50--100Oe. No ferromagnetic second phases and no significant deterioration in crystal quality with the incorporation of Mn can be detected by high-resolution x-ray diffraction. The result of x-ray absorption near-edge structures indicates that Mn atoms substitute for Ga atoms. The Mn concentrations of the layers are determined to reach x=0.038 by proton-induced x-ray emission.

Keywords: 75.50.Pp 81.05.Ea 81.15.Kk

Published: 01 May 2006

PACS:	75.50.Pp	(Magnetic semiconductors)
	81.05.Ea	(III-V semiconductors)
	81.15.Kk	(Vapor phase epitaxy; growth from vapor phase)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2006/V23/I5/01286

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	CHEN Zhi-Tao
	SU Yue-Yong
	YANG Zhi-Jian
	ZHANG Yan
	ZHANG Bin
	GUO Li-Ping
	XU Ke
	PAN Yao-Bao
	ZHANG Han
	ZHANG Guo-Yi

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