| Original Articles |
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Atomistic Simulation of He Clustering and Defects Produced in Ni |
| LIU Ti-Jiang1;WANG Yue-Xia**;PAN Zheng-Ying1,2;JIANG Xiao-Mei1;ZHOU-Liang1;ZHU Jing1 |
| 1Institute of Modern Physics, Fudan University, Shanghai 200433
2State Key Laboratory for Advanced Photonic Materials and Devices, Fudan University, Shanghai 200433 |
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| Cite this article: |
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LIU Ti-Jiang, WANG Yue-Xia, PAN Zheng-Ying et al 2006 Chin. Phys. Lett. 23 1261-1264 |
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Abstract Using the molecular dynamics method, the stability of small He-vacancy clusters is studied under the condition of the high He and low vacancy densities. The result shows that there is a competition between He atoms detrapped and self-interstitial atoms (SIAs) emitted during the clustering of He atoms. When the He number is above a critical value of 9, the SIA emission is predominant. The SIA emission can result in deep capture of He atoms since the binding energy of He to a He-vacancy cluster is increased with the number of SIAs created. The cluster thus grows up. In addition, more SIAs are created when the temperature is elevated. The average volume of a He atom is increased. The cluster expansion takes place at high temperature.
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| Keywords:
61.80.Az
61.72.Qq
61.82.Bg
02.70.Ns
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Published: 01 May 2006
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| PACS: |
61.80.Az
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(Theory and models of radiation effects)
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61.72.Qq
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(Microscopic defects (voids, inclusions, etc.))
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61.82.Bg
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(Metals and alloys)
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02.70.Ns
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(Molecular dynamics and particle methods)
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